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MC33GD3100 |
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| Part Number | MC33GD3100 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | The MC33GD3100 is an advanced single channel gate driver for IGBTs and SiC power devices. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging cu... |
| Features |
This section summarizes the key features, safety features, and regulatory approvals.
3.1 Key features
• SPI interface for safety monitoring, programmability and flexibility • Low propagation delay and minimal PWM distortion • Integrated Galvanic signal isolation (up to 8 kV) • Integrated gate drive power stage capable of 15 A peak source and sink • Fully programmable Active Miller Clamp • Compatible with negative gate supply • Compatible with current sense and temperature sense IGBTs • Integrated soft shutdown, two-level turn-off, active clamp, and segmented drive for wave shaping • CMTI > 100... |
| Document |
 MC33GD3100 Data Sheet
PDF 503.27KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MC33GD3000 |
NXP |
Three phase field effect transistor predriver |
|
| 2 | MC33001 |
ST Microelectronics |
GENERAL PURPOSE SINGLE JEFT OPERATIONAL AMPLIFIERS |
|
| 3 | MC33001A |
ST Microelectronics |
GENERAL PURPOSE SINGLE JEFT OPERATIONAL AMPLIFIERS |
|
| 4 | MC33001B |
ST Microelectronics |
GENERAL PURPOSE SINGLE JEFT OPERATIONAL AMPLIFIERS |
|
| 5 | MC33004 |
STMicroelectronics |
GENERAL PURPOSE QUAD J-FET OPERATIONAL AMPLIFIERS |
|