| No. | Partie # | Fabricant | Description | Fiche Technique |
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NXP |
N-channel transistor • Direct interface to C-MOS, TTL, etc. • High-speed switching • No second breakdown PINNING - SOT89 1 2 3 = source = drain = gate QUICK REFERENCE DATA Drain-source voltage Drain-source voltage (non-repetitive peak; tp ≤ 2 ms) Gate-source voltage (ope |
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NXP |
P-channel transistor • Very low RDS(on) • Direct interface to C-MOS • High-speed switching • No second breakdown QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resis |
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NXP |
P-channel transistor • Very low RDS(on) • Direct interface to C-MOS, TTL • High-speed switching • No second breakdown QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON- |
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NXP |
PNP transistors • Low current (max. 200 mA) • High voltage (max. 300 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP high-voltage transistor in a SOT89 plastic package. NPN complements: BST39 and BST40. MARKING TYPE NUMBER BST15 BST16 |
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NXP |
NPN transistors • High current (max. 0.5 A) • Low voltage (max. 80 V) • Integrated diode and resistor. APPLICATIONS • Industrial switching applications such as: – Print hammer – Solenoid – Relay and lamp driving. DESCRIPTION NPN Darlington transistor in a SOT89 plas |
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NXP |
P-channel transistor • Very low RDS(on) • Direct interface to C-MOS • High-speed switching • No second breakdown QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resis |
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NXP |
PNP transistors • Low current (max. 200 mA) • High voltage (max. 300 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP high-voltage transistor in a SOT89 plastic package. NPN complements: BST39 and BST40. MARKING TYPE NUMBER BST15 BST16 |
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NXP |
NPN transistors • Low current (max. 100 mA) • High voltage (max. 350 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN high-voltage transistor in a SOT89 plastic package. PNP complements: BST15 and BST16. MARKING TYPE NUMBER BST39 BST40 |
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NXP |
NPN transistors • Low current (max. 100 mA) • High voltage (max. 350 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN high-voltage transistor in a SOT89 plastic package. PNP complements: BST15 and BST16. MARKING TYPE NUMBER BST39 BST40 |
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NXP |
NPN transistors • High current (max. 0.5 A) • Low voltage (max. 80 V) • Integrated diode and resistor. APPLICATIONS • Industrial switching applications such as: – Print hammer – Solenoid – Relay and lamp driving. DESCRIPTION NPN Darlington transistor in a SOT89 plas |
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NXP |
NPN transistors • High current (max. 0.5 A) • Low voltage (max. 80 V) • Integrated diode and resistor. APPLICATIONS • Industrial switching applications such as: – Print hammer – Solenoid – Relay and lamp driving. DESCRIPTION NPN Darlington transistor in a SOT89 plas |
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NXP |
PNP transistors • High current (max. 0.5 A) • Low voltage (max. 80 V) • Integrated diode and resistor. APPLICATIONS • Industrial switching applications such as: – Print hammer – Solenoid – Relay and lamp driving. DESCRIPTION PNP Darlington transistor in a SOT89 pl |
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NXP |
PNP transistors • High current (max. 0.5 A) • Low voltage (max. 80 V) • Integrated diode and resistor. APPLICATIONS • Industrial switching applications such as: – Print hammer – Solenoid – Relay and lamp driving. DESCRIPTION PNP Darlington transistor in a SOT89 pl |
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NXP |
PNP transistors • High current (max. 0.5 A) • Low voltage (max. 80 V) • Integrated diode and resistor. APPLICATIONS • Industrial switching applications such as: – Print hammer – Solenoid – Relay and lamp driving. DESCRIPTION PNP Darlington transistor in a SOT89 pl |
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NXP |
N-channel transistor • Very low RDS(on) • Direct interface to C-MOS, TTL, etc. • High-speed switching • No second breakdown PINNING - TO-92 VARIANT 1 = source 2 = gate 3 = drain QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC |
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NXP |
N-channel transistor • Very low RDS(on) • Direct interface to C-MOS, TTL, etc. • High-speed switching • No second breakdown PINNING - TO-92 VARIANT 1 = source 2 = gate 3 = drain QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC |
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NXP |
N-channel transistor • Direct interface to C-MOS, TTL, etc. • High-speed switching • No second breakdown QUICK REFERENCE DATA Drain-source voltage Drain-source voltage (non-repetitive peak; tp ≤ 2 ms) Gate-source voltage (open drain) Drain current (DC) Total power dissip |
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NXP |
N-channel transistor • Direct interface to C-MOS, TTL, etc. • High-speed switching • No second breakdown QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance ID |
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NXP |
N-channel transistor • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Line current interrupter in telephone sets • Relay, high-speed and line transformer drivers. DESCRIPTION N-channel enhancement mode vertical D-MOS |
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NXP |
N-channel transistor • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Line current interrupter in telephone sets • Relay, high-speed and line transformer drivers. DESCRIPTION N-channel enhancement mode vertical D-MOS |
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