| No. | Partie # | Fabricant | Description | Fiche Technique |
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Niko-Sem |
N-Channel MOSFET °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS STATIC VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA V |
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Niko-Sem |
N-Channel Logic Level Enhancement Mode Field Effect Transistor °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0 |
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Niko-Sem |
N-Channel MOSFET 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS STATIC VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA |
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Niko-Sem |
N-Channel Logic Level Enhancement Mode Field Effect Transistor STICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS STATIC VGS = 0V, ID = 250µA VDS = VGS |
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NIKO-SEM |
N&P-Channel MOSFET e IGSS STATIC VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA VDS = VGS, ID = 250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V VDS = 0V, VGS = ±20V LIMITS UNIT MIN TYP MAX N-Ch 30 P-Ch -30 N-Ch 1 P-Ch -1 N-Ch P-Ch 1.5 2.5 -1.5 -2.5 V ±100 nA ±10 |
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Niko-Sem |
N-Channel MOSFET C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS STATIC VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS |
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