Features
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°C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TC = 125 °C 27 1 1.6 3 ±250 25 250 nA µA V LIMITS UNIT MIN TYP MAX
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SEP-22-2004
Free Datasheet http://www.datasheet-pdf.com/
NIKO-SEM
N-Channel Logic Level Enhancement Mode Field Effect Transistor
P50N03LDG
TO-252 (DPAK) Lead-Free
On-State Drain Current1 Drain-Source On-State Resistance1...
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