| No. | Partie # | Fabricant | Description | Fiche Technique |
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NIKO-SEM |
N-Channel MOSFET TEST CONDITIONS STATIC LIMITS UNIT MIN TYP MAX Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = 250A VDS = VGS, I |
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NIKO-SEM |
N-/P-Channel FET Pulse width limited by maximum junction temperature. TYPICAL MAXIMUM 6 42 UNITS °C / W °C / W ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage V(BR)DSS STATIC VG |
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NIKO-SEM |
N-Channel MOSFET |
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NIKO-SEM |
N-Channel Transistor |
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NIKO-SEM |
N-Channel MOSFET |
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