No. | Partie # | Fabricant | Description | Fiche Technique |
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NIKO-SEM |
N-Channel Transistor |
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NIKO-SEM |
P-Channel Field Effect Transistor reakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID =-250µA VDS = V |
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NIKO-SEM |
N-Channel Transistor |
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NIKO-SEM |
N-Channel MOSFET |
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NIKO-SEM |
P-Channel Field Effect Transistor MIN TYP MAX Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V VDS = |
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NIKO-SEM |
N-Channel Transistor |
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NIKO-SEM |
N-Channel Transistor |
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NIKO-SEM |
N-Channel Transistor |
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NIKO-SEM |
N-Channel MOSFET |
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NIKO-SEM |
N-Channel MOSFET |
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NIKO-SEM |
N-Channel MOSFET |
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