| No. | Partie # | Fabricant | Description | Fiche Technique |
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NIKO-SEM |
P-Channel FET ATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±25V VDS = -24V, VGS = 0V VDS = -20V, VGS = 0V, TJ = |
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NIKO-SEM |
P-Channel FET S STATIC LIMITS UNIT MIN TYP MAX Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance1 V(BR)DSS VGS(th) IGSS IDSS RDS(ON) VGS = 0V, ID = -250µA VDS = VGS, ID = |
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NIKO-SEM |
N-Channel MOSFET 2.1 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. |
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