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Features
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S
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current
Drain-Source On-State Resistance1
V(BR)DSS VGS(th) IGSS IDSS
RDS(ON)
VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±25V VDS = -24V, VGS = 0V VDS = -20V, VGS = 0V, TJ = 125 °C VGS = -4.5V, ID = -9A VGS = -10V, ID = -12A
-30 V
-1 -1.5 -3
±100 nA
-1 µA
-10
17.8 22 mΩ
11.3 14
REV 1.0
Jan-29-2010 1
NIKO-SEM P-Channel Logic Level Enhancement Mode P1403EV8
Field Effect Transistor
SOP-8
Halogen-Free & Lead-Free
Forward Transconductance1
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P1403EV8 Data Sheet
