| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET ● VDS =85V,ID =160A RDS(ON) <3.8mΩ @ VGS=10V ● Excellent gate charge x RDS(on) product ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested Schematic diagram Marking and pin assignment Application |
|
|
|
|
Rohm |
Multi-channel Power-Supply Step-up DC/DC Converter with Built-in 3A FET Synchronous Step-down DC/DC Converter with Built-in 2A FET High Voltage LDO (50mA) Low Voltage LDO (400mA) Positive/ Negative Charge Pumps (Integrated-diode) 10bit DAC 4CH VCOM Amplifier Ga |
|
|
|
|
Grenergy |
3-Channel Supervisor IC for Power Supply Over-voltage protection and lockout Under-voltage protection and lockout Open drain power good output signal Built-in 300mS delay for power good 38mS de-bounce for PSON/ control 73uS de-bounce for noise immunity www.DataSheet4U.com Description GR831 |
|
|
|
|
Matsuki |
N-Channel 100-V (D-S) MOSFET ● RDS(ON)≦100mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability The ME15N10 is the N-Channel logic enhancement mode power field effect transistors, using high cell dens |
|
|
|
|
Matsuki |
N-Channel 30-V(D-S) MOSFET ● RDS(ON)≦11.7mΩ@VGS=10V ● RDS(ON)≦18.2mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Battery Powered System ● DC/DC |
|
|
|
|
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET ● VDS =150V,ID =140A RDS(ON) <6.2mΩ @ VGS=10V ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested Application ● DC/DC Converter ● Ideal for high-frequ |
|
|
|
|
Wing On |
N-Channel Super Junction MOSFET N-Channel Super Junction MOSFET New technology for high voltage device Low RDS(ON) and low conduction losses Small package BVDSS = 650 V Ultra low gate charge cause lower driving requirement 100% avalanche tested RDS(on) = 0.35 Ω |
|
|
|
|
SUNMOON |
Single-channel constant current LED driver controller www.linkage66.com -3- [email protected] SM2082 LED V1.4 6. SM2082 6 ： PLED PIN n * VLED * ILED VIN * I LED n * VLED VIN Vin ，VLED LED ，ILED LED 。 LED n ，。 ， SM2082 OUT ， η 。 LED LED ： 1) 6 ，OUT VOUT = Vin |
|
|
|
|
NCE Power Semiconductor |
N-Channel Super Junction Power MOSFET ●Optimized body diode reverse recovery performance ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant VDS RDS(ON)TYP ID 650 V 110 mΩ 28 A Appli |
|
|
|
|
Matsuki |
N-Channel MOSFET ● RDS(ON)≦0.4Ω@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Po wer Management ● DC/DC Converter ● LCD TV & Monitor Display inverter ● CCFL inverter ● |
|
|
|
|
Matsuki |
P-Channel MOSFET ● RDS(ON)≦5.2mΩ@VGS=-10V ● RDS(ON)≦9.5mΩ@VGS=-4V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powe |
|
|
|
|
NCE Power Semiconductor |
N-Channel Super Junction Power MOSFET ●Optimized body diode reverse recovery performance ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant VDS RDS(ON)TYP ID 650 V 110 mΩ 28 A Appli |
|
|
|
|
Matsuki |
N-Channel MOSFET ● RDS(ON)≦2.0mΩ@VGS=10V ● RDS(ON)≦3 mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● NB/MB Vcore Low side switching ● P |
|
|
|
|
SUNMOON |
Single-channel LED constant current drive controller |
|
|
|
|
Sunmoon |
Display panel driver IC |
|
|
|
|
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET ● VDS =60V,ID =120A RDS(ON) < 4.0mΩ @ VGS=10V (Typ:3.5mΩ) RDS(ON) < 5.0mΩ @ VGS=4.5V (Typ:4.0mΩ) ● Excellent gate charge x RDS(on) product ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested Schem |
|
|
|
|
Matsuki |
30V N-Channel Enhancement Mode MOSFET Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute Maxim |
|
|
|
|
SUNMOON |
Single channel LED constant current drive controller 。 （ 4、5） ，TA=25° C。 VOUT_MIN IOUT=30mA - - 6.5 V VOUT_BV OUT - 450 - - V IOUT - 5 - 100 mA IDD VOUT=10V，REXT 0.1 0.16 0.25 mA VREXT REXT VOUT=10V 0.58 0.6 0.62 V DIOUT IOUT IOUT=30mA - ±4 |
|
|
|
|
VBsemi |
N-Channel Super Junction Power MOSFET • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Low RDS(on) • Compliant to RoHS Directive 2002/95/EC |
|
|
|
|
NCE Power |
N-Channel Super Junction Power MOSFET ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant VDS RDS(ON) MAX ID 650 V 260 mΩ 15 A Application ● P |
|