| No. | Partie # | Fabricant | Description | Fiche Technique |
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NEC |
NPN Transistor |
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NEC |
NPN Silicon Transistor |
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NEC |
3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT • Output Power : Pout = +21 dBm MIN. @Pin = −5 dBm, f = 1.9 GHz, VDS = 3.0 V : Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V • Single Supply voltage : VDS = 3.0 V TYP. • Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) su |
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NEC |
LOW NOISE AND HIGH GAIN AMPLIFIER • Low Noise • High Gain : NV = −101 dBV TYP. @ VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ : NV = −102 dBV TYP. @ VDD = 1.5 V, Cin = 5 pF, RL = 2.2 kΩ : GV = +5.7 dB TYP. @ VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +7.7 dB TYP. @ VDD = 1.5 V, Cin = 5 pF, |
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NEC |
WIDE BAND SPDT SWITCH • Supply voltage : VDD = 1.8 to 3.3 V (2.8 V TYP.) • Switch control voltage : Vcont (H) = 1.8 to 3.3 V (2.8 V TYP.) : Vcont (L) = −0.2 to +0.2 V (0 V TYP.) • Low insertion loss : Lins1 = 0.6 dB TYP. @ f = DC to 1.0 GHz, VDD = 2.8 V, Vcont (H) |
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NEC |
CMOS MMIC 4 x 2 IF SWITCH MATRIX • 4 independent IF channels, integral switching to channel input to either channel output • Integrated 4 bit decoder • Frequency range • High isolation D/U ratio • Insertion loss • Insertion loss flatness • Control voltage : f = 250 to 2 150 MHz : IS |
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NEC |
CMOS MMIC 4 x 2 IF SWITCH MATRIX • 4 independent IF channels, integral switching to channel input to either channel output • Integrated 4 bit decoder • Frequency range • High isolation D/U ratio • Insertion loss • Insertion loss flatness • Control voltage : f = 250 to 2 150 MHz : IS |
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NEC |
WIDE BAND DPDT SWITCH • Supply voltage • Switch control voltage • : VDD = 1.5 to 3.6 V (2.8 V TYP.) : Vcont (H) = 1.5 to 3.6 V (2.8 V TYP.) : Vcont (L) = −0.2 to +0.4 V (0 V TYP.) Low insertion loss Note : Lins1 = 0.5 dB TYP. @ f = 0.01 to 0.05 GHz : Lins2 = 0.8 dB TYP. @ |
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