Motorola Semiconductor MRF fiche technique

No.	Partie #	Fabricant	Description
1	MRF433	Motorola Semiconductor	RF POWER TRANSISTOR
2	MRF961	Motorola Semiconductor	HIGH FREQUENCY TRANSISTOR
3	MRF2001	Motorola Semiconductor	Microwave Power Transistors
4	MRF660	Motorola Semiconductor	RF Power Transistor
5	MRF962	Motorola Semiconductor	HIGH FREQUENCY TRANSISTOR
6	MRF2001B	Motorola Semiconductor	Microwave Power Transistors
7	MRF2001M	Motorola Semiconductor	Microwave Power Transistors
8	MRF502	Motorola Semiconductor	(MRF501 / MRF502) High Frequency Transistors
9	MRF6V2150N	Motorola Semiconductor	RF Power Field Effect Transistor - 272 WB - 4 PLASTIC MRF6V2300NB PARTS ARE SINGLE - ENDED Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TJ Value - 0.5 +110 - 0.5 + 1
10	MRF7S19100NR1	Motorola Semiconductor	RF Power Field Effect Transistors • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Designed for Digital Predistortion Error Correction
11	MRFE6S9200HR3	Motorola Semiconductor Products	RF Power FET • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • RoH
12	MRF485	Motorola Semiconductor	The RF Line / NPN Silicon RF Power Transistor
13	MRF475	Motorola Semiconductor	RF Power Transistor
14	MRF501	Motorola Semiconductor	(MRF501 / MRF502) High Frequency Transistors
15	MRFIC1830	Motorola Semiconductor	Low Noise Amplifier
16	MRF965	Motorola Semiconductor	HIGH FREQUENCY TRANSISTOR
17	MRF6V2150NB	Motorola Semiconductor	RF Power Field Effect Transistor - 272 WB - 4 PLASTIC MRF6V2300NB PARTS ARE SINGLE - ENDED Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TJ Value - 0.5 +110 - 0.5 + 1
18	MRF6V2300N	Motorola Semiconductor	RF Power Field Effect Transistor • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • Excellent Thermal Stability • Facilitates Manual Gain Control, ALC and Modulation Techniques • 225°C Capable Plastic Package • RoHS Compliant
19	MRF7S19100NBR1	Motorola Semiconductor	RF Power Field Effect Transistors • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Designed for Digital Predistortion Error Correction
20	MRF7S18170HR3	Motorola Semiconductor	RF Power Field Effect Transistors • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Im