| No. | Partie # | Fabricant | Description | Fiche Technique |
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Motorola |
RF AMPLIFIER TRANSISTOR |
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Motorola Semiconductor |
NPN Silicon High Frequency Transistor |
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Motorola |
(MMBC1321Q2 - MMBC1321Q5) SMALL-SIGNAL NPN TRANSISTORS |
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Motorola |
HOT-CARRIER DIODE |
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Motorola |
Silicon Epicap Diodes |
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Motorola |
HOT-CARRIER UHF MIXER DIODE |
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Motorola |
TMOS FET Transistor dc ON CHARACTERISTICS (2) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) Static Drain –Source On –Resistance (VGS = 10 Vdc, ID = 200 mA) On –State Drain Current (VDS = 25 Vdc, VGS = 0) VGS(th) rDS(on) ID(off) 0.8 — — 3.0 5.0 0.5 Vdc W mA pF DYNAMIC |
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Motorola |
NPN Silicon Low Noise / High-Frequency Transistors excellent broadband linearity and is offered in a variety of packages. • Fully Implanted Base and Emitter Structure • 9 Finger, 1.25 Micron Geometry with Gold Top Metal • Gold Sintered Back Metal • Available in tape and reel packaging options: T1 suf |
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Motorola |
Low Noise Transistor ter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Collector –Base Breakdown Voltage (IC = –100 µAdc, IE = 0) Collector Cutoff Current (VCB = –10 Vdc, IE = 0) (VCB = –35 Vdc, IE = 0) 1. FR –5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5 |
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Motorola |
Transient Voltage Suppressors • SOT –23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration • Peak Power — 24 or 40 Watts @ 1.0 ms (Unidirectional), per Figure 5 Waveform • Maximum Clamping Voltage @ Peak Pulse Current • Low Le |
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Motorola |
DUAL ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS • SOT –23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration • Peak Power — 24 or 40 Watts @ 1.0 ms (Unidirectional), per Figure 5 Waveform • Maximum Clamping Voltage @ Peak Pulse Current • Low Le |
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Motorola Semiconductor |
NPN Silicon High Frequency Transistor |
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Motorola |
HIGH-SPEED SWITCHING DIODE |
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Motorola |
NPN SILICON RF TRANSISTOR |
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Motorola |
RF Amplifier Transistor |
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Motorola |
VHF MIXER TRANSISTOR |
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Motorola |
Switching Diode • Very Low Leakage (≤ 500 pA) promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair contingent upon the other diode being in a non –forward –biased condition. • Offered in four Surface Mount |
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Motorola |
DRIVER TRANSISTOR |
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Motorola |
Schottky Barrier Diodes |
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Motorola |
Switching Diode • Very Low Leakage (≤ 500 pA) promotes extended battery life by decreasing energy waste • Offered in four Surface Mount package types • Available in 8 mm Tape and Reel in quantities of 3,000 Applications • ESD Protection • Reverse Polarity Protectio |
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