Motorola MGP fiche technique

No.	Partie #	Fabricant	Description
1	MGP20N14CL	Motorola	Internally Clamped / N-Channel IGBT Gate –Emitter ESD protection, Gate –Collector overvoltage protection from SMARTDISCRETES™ monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate –Drain Clamp Limits Stress Applied to Load • Integrated ESD Diode Protect
2	20N40CL	Motorola	MGP20N40CL Gate –Emitter ESD protection, Gate –Collector overvoltage protection from SMARTDISCRETES™ monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate –Drain Clamp Limits Stress Applied to Load • Integrated ESD Diode Protect
3	MGP15N60U	Motorola	Insulated Gate Bipolar Transistor Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance — Junction to Case – IGBT — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for
4	MGP20N60U	Motorola	Insulated Gate Bipolar Transistor Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance — Junction to Case – IGBT — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for
5	MGP7N60E	Motorola	Insulated Gate Bipolar Transistor °C 600 VOLTS SHORT CIRCUIT RATED LOW ON –VOLTAGE C G C G E CASE 221A –09 TO –220AB E MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector –Emitter Voltage Collector –Gate Voltage (RGE = 1.0 MΩ) Gate –Emitter Voltage — Continuous Collecto
6	MGP15N38CL	Motorola	Internally Clamped N-Channel IGBT Gate –Emitter ESD protection, Gate Collector Over – Voltage Protection from monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate – Collector Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Lo
7	MGP11N60E	Motorola	Insulated Gate Bipolar Transistor 5°C 600 VOLTS SHORT CIRCUIT RATED LOW ON –VOLTAGE C G C G E CASE 221A –06 TO –220AB E MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector –Emitter Voltage Collector –Gate Voltage (RGE = 1.0 MΩ) Gate –Emitter Voltage — Continuous Collect
8	MGP14N60E	Motorola	Insulated Gate Bipolar Transistor °C 600 VOLTS SHORT CIRCUIT RATED LOW ON –VOLTAGE C G C G E CASE 221A –06 TO –220AB E MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector –Emitter Voltage Collector –Gate Voltage (RGE = 1.0 MΩ) Gate –Emitter Voltage — Continuous Collecto
9	MGP20N35CL	Motorola	SMARTDISCRETES Internally Clamped / N-Channel IGBT Gate –Emitter ESD protection, Gate –Collector overvoltage protection from SMARTDISCRETES ™ monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate –Drain Clamp Limits Stress Applied to Load • Integrated ESD Diode Protec
10	MGP20N40CL	Motorola	SMARTDISCRETES Internally Clamped / N-Channel IGBT Gate –Emitter ESD protection, Gate –Collector overvoltage protection from SMARTDISCRETES™ monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate –Drain Clamp Limits Stress Applied to Load • Integrated ESD Diode Protect
11	MGP21N60E	Motorola	Insulated Gate Bipolar Transistor 5°C 600 VOLTS SHORT CIRCUIT RATED LOW ON –VOLTAGE C G C G E CASE 221A –06 TO –220AB E MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector –Emitter Voltage Collector –Gate Voltage (RGE = 1.0 MΩ) Gate –Emitter Voltage — Continuous Collect
12	MGP7N60ED	Motorola	Insulated Gate Bipolar Transistor
13	MGP4N60E	Motorola	Insulated Gate Bipolar Transistor 5°C 600 VOLTS SHORT CIRCUIT RATED LOW ON –VOLTAGE C G C G E CASE 221A –06 TO –220AB E MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector –Emitter Voltage Collector –Gate Voltage (RGE = 1.0 MΩ) Gate –Emitter Voltage — Continuous Collect
14	MGP4N60ED	Motorola	Insulated Gate Bipolar Transistor
15	MGP15N43CL	Motorola	Internally Clamped N-Channel IGBT Gate –Emitter ESD protection, Gate Collector Over – Voltage Protection from monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate – Collector Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Lo
16	MGP11N60ED	Motorola	Insulated Gate Bipolar Transistor