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Motorola |
TMOS Dual N-Channel ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a very low reverse recovery time. EZFET devices are designed for use in low volt |
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Motorola |
VOLTAGE CLAMPED CURRENT LIMITING MOSFET current limiting for short circuit protection, integrated Gate –Source clamping for ESD protection and integral Gate –Drain clamping for over –voltage protection and Sensefet technology for low on –resistance. No additional gate series resistance is requ |
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Motorola |
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM n Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Surface Mount Package Available in 16 mm, 13 –inch/2500 Unit Tape & Reel, Add |
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Motorola |
TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM Temperature • Surface Mount Package Available in 16 mm, 13 –inch/2500 Unit Tape & Reel, Add –T4 Suffix to Part Number • Replaces MTD1N40E MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) |
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