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Motorola |
MTD20N03HL nch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non –Repetitive (tp ≤ 10 ms |
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Motorola |
Internally Clamped / N-Channel IGBT Gate –Emitter ESD protection, Gate –Collector overvoltage protection from SMARTDISCRETES™ monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate –Drain Clamp Limits Stress Applied to Load • Integrated ESD Diode Protect |
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Motorola |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode Robust RBSOA C IGBT & DIODE IN TO –264 20 A @ 90°C 28 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED G G E C E CASE 340G –02, Style 5 TO –264 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector –Emitter Voltage Collector –Gate Voltage (RGE = |
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Motorola |
TMOS POWER FET th ac –dc and dc –dc power supplies. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ® D N –Ch |
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Motorola |
MGP20N40CL Gate –Emitter ESD protection, Gate –Collector overvoltage protection from SMARTDISCRETES™ monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate –Drain Clamp Limits Stress Applied to Load • Integrated ESD Diode Protect |
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Motorola |
Insulated Gate Bipolar Transistor Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance — Junction to Case – IGBT — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for |
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Motorola |
Insulated Gate Bipolar Transistor r−Gate Voltage (RGE = 1.0 MΩ) Gate−Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) VCES VCGR VGE IC25 IC90 ICM 1200 Vdc 1200 Vdc ±20 Vdc 28 Adc 20 56 Apk To |
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Motorola |
Power MOSFET SS and VDS(on) Specified at Elevated Temperature • Surface Mount Package Available in 16 mm, 13 –inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number • Available in Insertion Mount, Add –1 or 1 to Part Number MAXIMUM RATINGS (TC = 25°C unless othe |
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Motorola |
TMOS POWER FET 20 AMPERES 200 VOLTS ERES 200 VOLTS RDS(on) = 0.16 OHM ® D G S CASE 221A –06, Style 5 TO –220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous — Non –Repetitive (tp ≤ 10 m |
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Motorola |
SMARTDISCRETES Internally Clamped / N-Channel IGBT Gate –Emitter ESD protection, Gate –Collector overvoltage protection from SMARTDISCRETES ™ monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate –Drain Clamp Limits Stress Applied to Load • Integrated ESD Diode Protec |
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Motorola |
SMARTDISCRETES Internally Clamped / N-Channel IGBT Gate –Emitter ESD protection, Gate –Collector overvoltage protection from SMARTDISCRETES™ monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate –Drain Clamp Limits Stress Applied to Load • Integrated ESD Diode Protect |
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Motorola |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
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Motorola |
DUAL 4-INPUT NAND GATE .4 –100 0.8 2.2 0.35 0.5 20 IIH IIL IOS ICC V µA mA mA mA 2.7 3.5 0.25 0.4 V V 2.5 – 0.65 3.5 0.8 – 1.5 V V Min 2.0 0.7 V Typ Max Unit V Test Conditions Guaranteed Input HIGH Voltage for All Inputs Guaranteed Input LOW Voltage for All Inputs VCC = MI |
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Motorola |
TMOS POWER FET alanche Energy Specified • Source –to –Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Short Heatsink Tab Manufactured — N |
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Motorola |
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM unt Package Available in 16 mm, 13 –inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source |
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Motorola |
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors ™ Data Sheet V™ MTD20N06V TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
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Motorola |
TMOS POWER FET ackage Available in 16 mm, 13 –inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source Volta |
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Motorola |
TMOS POWER FET 20 AMPERES 60 VOLTS of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors Features Common to TMOS V and TMOS E –FETS • Avalanche Energy Specified • IDSS and V |
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Motorola |
Power MOSFET |
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Motorola |
RF Power Field Effect Transistor • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gat |
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