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Mitsubishi Electric Semiconductor |
Intelligent Power Module a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is pos |
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Mitsubishi Electric Semiconductor |
Intelligent Power Module ٗ Complete Output Power Circuit ٗ Gate Drive Circuit ٗ Protection Logic – Short Circuit – Over Current – Over Temperature – Under Voltage VWPC WP WFO VUPC UP UFO GND GND VVPC VP VFO VWPI OUT V CC OUT V CC OUT V CC OUT V CC OUT V CC OUT V C |
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Mitsubishi Electric Semiconductor |
Intelligent Power Module a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is pos |
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Mitsubishi Electric |
CD Player Digital Signal Processor et4U.com et4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataShee |
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Mitsubishi Electric Semiconductor |
IGBT Module ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering In |
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Mitsubishi |
12 BIT / 16 BIT SERIAL PARALLEL CONVERTER |
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Mitsubishi |
DIGITAL ECHO |
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Mitsubishi Electric Semiconductor |
Intelligent Power Module a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is pos |
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Mitsubishi Electric Semiconductor |
Transistor verse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one |
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Mitsubishi Electric |
Piggyback |
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Mitsubishi Electric Semiconductor |
Intelligent Power Module a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V b) Using new Diode which is designed to get soft reverse recovery characteristics. • 3φ 50A, 600V Current-sens |
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Mitsubishi Electric Semiconductor |
Transistor llector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak va |
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Mitsubishi Electric Semiconductor |
Transistor or reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value o |
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Mitsubishi Electric Semiconductor |
Transistor diode current) (Transistor part including D1, Tj=25°C) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 50 50 310 3 500 Unit V V V |
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Mitsubishi Electric Semiconductor |
Transistor n temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 60 |
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Mitsubishi Electric Semiconductor |
Transistor nction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 6 |
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Mitsubishi Electric Semiconductor |
Transistor ward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (ha |
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Mitsubishi Electric Semiconductor |
Transistor mitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) C |
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Mitsubishi |
SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER for VOLTAGE SYNTHESIZER with ON-SCREEN DISPLAY CONTROLLER |
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Mitsubishi Electric Semiconductor |
Intelligent Power Module a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed to get soft reverse recovery characteristics. • 3φ 50A, 1200V Current-sense IGBT for 15kHz switching • Monol |
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