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QM50DY-H |
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| Part Number | QM50DY-H |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Description | MITSUBISHI TRANSISTOR MODULES QM50DY-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-H • • • • • IC Collector current .. 50A VCEX Collector-emitter voltage ..... 6... |
| Features |
verse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 50 50 310 3 500 –40~+150 –40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 Unit V V V V A A W A A °C °C V N ·m kg ·cm N ·m kg ·cm g — Mounting torque Mounting screw M6 — Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEB... |
| Document |
 QM50DY-H Data Sheet
PDF 70.05KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | QM50DY-24 |
Mitsubishi Electric Semiconductor |
Transistor |
|
| 2 | QM50DY-24B |
Mitsubishi Electric Semiconductor |
Transistor |
|
| 3 | QM50DY-2H |
Mitsubishi Electric Semiconductor |
Transistor |
|
| 4 | QM50DY-HB |
Mitsubishi Electric Semiconductor |
Transistor |
|
| 5 | QM500 |
Mitsubishi Electric Semiconductor |
Transistor |
|