| No. | Partie # | Fabricant | Description | Fiche Technique |
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Mitsubishi Electric Semiconductor |
Silicon MOSFET 1 3.0+/-0.4 5.1+/-0.5 For output stage of high power amplifiers in UHF band mobile radio sets. 2.3+/-0.3 APPLICATION 2.8+/-0.3 0.10 PIN 1.Drain 2.Source 3.Gate UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGS |
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Mitsubishi Electric |
Silicon MOSFET Power Transistor 1 APPLICATION For output stage of high power amplifiers in VHF band Mobile radio sets. 2.3+/-0.3 2.8+/-0.3 0.10 3.0+/-0.4 5.1+/-0.5 PIN 1.Drain 2.Source 3.Gate UNIT:mm RoHS COMPLIANT RD30HVF1-101 is a RoHS compliant products. RoHS compliance |
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