| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Microsemi Corporation |
Complimentary Power Transistors • • • • • • • • Planar Process for Reliability Fast Switching High-Frequency Power Transistors For Complementary Use with Each Other 15 mj Reverse Energy Rating with IC = 10MA and 4 V Reverse Bias Similar to 2N5004 and 2N5005 but JEDEC TO-254AA Pac |
|
|
|
|
Microsemi Corporation |
Complimentary Power Transistors • • • • • • • • Planar Process for Reliability Fast Switching High-Frequency Power Transistors For Complementary Use with Each Other 15 mj Reverse Energy Rating with IC = 10MA and 4 V Reverse Bias Similar to 2N5004 and 2N5005 but JEDEC TO-254AA Pac |
|
|
|
|
Microsemi Corporation |
NPN HIGH POWER SILICON TRANSISTOR Cutoff Current VEB = 7.0 Vdc VCEO(sus) ICES ICEX IEBO 80 1.0 1.0 1.0 Vdc mAdc mAdc mAdc 6 Lake Street, Lawrence, MA 01841 DataSheet4U.com 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 DataSheet4U.com DataSheet 4 U .com |
|
|
|
|
Microsemi Corporation |
PNP HIGH POWER SILICON TRANSISTOR e Cutoff Current VEB = 7.0 Vdc VCEO(sus) ICES ICEX IEBO 80 5.0 5.0 5.0 Vdc mAdc mAdc mAdc 6 Lake Street, Lawrence, MA 01841 DataSheet4U.com 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 DataSheet4U.com DataSheet 4 U .com |
|
|
|
|
Microsemi Corporation |
NPN SILICON SWITCHING TRANSISTOR 10 Ω Collector-Base Cutoff Current VCB = 20 Vdc Emitter-Base Cutoff Current VEB = 4.0 Vdc 40 5.0 15 20 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N708 JANTX SERIES ELECTRICAL CHARAC |
|
|
|
|
Microsemi Corporation |
NPN LOW POWER SILICON TRANSISTOR mbol V(BR)CEO V(BR)CER ICBO IEBO Min. Max. Unit Vdc Vdc 10 10 ηAdc ηAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 30 mAdc Collector-Emitter Breakdown Voltage IC = 10 mAdc, RBE = 10 Ω Collector-Base Cutoff Current VCB= 60 Vdc Emitt |
|
|
|
|
Microsemi Corporation |
PNP DARLINGTON HIGH POWER SILICON TRANSISTOR urrent VEB = 5.0 Vdc VCEO(sus) ICEO ICEX IEBO 100 1.0 0.5 2.0 Vdc mAdc mAdc mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N7371 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Chara |
|
|
|
|
Microsemi Corporation |
N-CHANNEL MOSFET Current VGS = 0V, VDS = 160V VGS = 0V, VDS = 160V, Tj = +125°C Static Drain-Source On-State Resistance VGS = 10V, ID = 17A pulsed VGS = 10V, ID = 27.4A pulsed Tj = +125°C VGS = 10V, ID = 17A pulsed Diode Forward Voltage VGS = 0V, ID = 27.4A pulsed S |
|
|
|
|
Microsemi Corporation |
N-CHANNEL MOSFET Current VGS = 0V, VDS = 160V VGS = 0V, VDS = 160V, Tj = +125°C Static Drain-Source On-State Resistance VGS = 10V, ID = 17A pulsed VGS = 10V, ID = 27.4A pulsed Tj = +125°C VGS = 10V, ID = 17A pulsed Diode Forward Voltage VGS = 0V, ID = 27.4A pulsed S |
|