| No. | Partie # | Fabricant | Description | Fiche Technique |
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Microsemi Corporation |
NPN SILICON MEDIUM POWER TRANSISTOR 2 Vdc 2N1479, 2N1481 2N1480, 2N1482 2N1479, 2N1481 2N1480, 2N1482 2N1479, 2N1481 2N1480, 2N1482 V(BR)CEO 40 55 60 100 5.0 5.0 10 Vdc V(BR)CEX Vdc ICBO IEBO µAdc µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) |
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Microsemi Corporation |
NPN SILICON MEDIUM POWER TRANSISTOR 2 Vdc 2N1479, 2N1481 2N1480, 2N1482 2N1479, 2N1481 2N1480, 2N1482 2N1479, 2N1481 2N1480, 2N1482 V(BR)CEO 40 55 60 100 5.0 5.0 10 Vdc V(BR)CEX Vdc ICBO IEBO µAdc µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) |
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Microsemi Corporation |
NPN SILICON MEDIUM POWER TRANSISTOR 2 Vdc 2N1479, 2N1481 2N1480, 2N1482 2N1479, 2N1481 2N1480, 2N1482 2N1479, 2N1481 2N1480, 2N1482 V(BR)CEO 40 55 60 100 5.0 5.0 10 Vdc V(BR)CEX Vdc ICBO IEBO µAdc µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) |
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Microsemi Corporation |
NPN SILICON MEDIUM POWER TRANSISTOR 2 Vdc 2N1479, 2N1481 2N1480, 2N1482 2N1479, 2N1481 2N1480, 2N1482 2N1479, 2N1481 2N1480, 2N1482 V(BR)CEO 40 55 60 100 5.0 5.0 10 Vdc V(BR)CEX Vdc ICBO IEBO µAdc µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) |
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Microsemi Corporation |
NPN LOW POWER SILICON TRANSISTOR mbol V(BR)CEO V(BR)CER ICBO IEBO Min. Max. Unit Vdc Vdc 10 10 ηAdc ηAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 30 mAdc Collector-Emitter Breakdown Voltage IC = 10 mAdc, RBE = 10 Ω Collector-Base Cutoff Current VCB= 60 Vdc Emitt |
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Microsemi Corporation |
NPN LOW POWER SILICON TRANSISTOR Collector-Base Cutoff Current VCB = 60 Vdc VCB = 80 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 2N1711, S 2N1890, S 2N1711, S 2N1890, S 2N1711, S 2N1890, S V(BR)CBO 75 100 50 80 30 60 7.0 10 10 5.0 Vdc V(BR)CER Vdc V(BR)CEO Vdc V(BR)EBO 2N171 |
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Microsemi Corporation |
SCRs 1.25 Amp/ Planear |
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Microsemi Corporation |
SCRs 1.25 Amp/ Planear |
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Microsemi Corporation |
SCRs 1.25 Amp/ Planear |
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Microsemi Corporation |
SCRs 1.25 Amp/ Planear |
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Microsemi Corporation |
NPN LOW POWER SILICON TRANSISTOR mbol V(BR)CEO V(BR)CER ICBO IEBO Min. Max. Unit Vdc Vdc 10 10 ηAdc ηAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 30 mAdc Collector-Emitter Breakdown Voltage IC = 10 mAdc, RBE = 10 Ω Collector-Base Cutoff Current VCB= 60 Vdc Emitt |
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