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2N1613L |
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| Part Number | 2N1613L |
| Manufacturer | Microsemi (https://www.microsemi.com/) Corporation |
| Description | TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/181 Devices 2N718A 2N1613 2N1613L Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collec... |
| Features |
mbol V(BR)CEO V(BR)CER ICBO IEBO Min. Max. Unit Vdc Vdc 10 10 ηAdc ηAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 30 mAdc Collector-Emitter Breakdown Voltage IC = 10 mAdc, RBE = 10 Ω Collector-Base Cutoff Current VCB= 60 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 30 50
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101 Page 1 of 2
2N718A, 2N1613, 2N1613L JAN, SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio IC = 0.1 mAdc, VCE = 10 Vdc IC =... |
| Document |
 2N1613L Data Sheet
PDF 56.28KB |
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