Micron Technology 46V fiche technique

No.	Partie #	Fabricant	Description
1	46V32M16	Micron Technology	MT46V32M16 • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data www.DataSheet4U.com capture (x16 has two – one per byte) • Internal, pipelined double-data-rate (DDR) architectur
2	46V16M8	Micron Technology	MT46V16M8 • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data www.DataSheet4U.com capture (x16 has two – one per byte) • Internal, pipelined double-data-rate (DDR) architectur
3	46V16M16	Micron Technology	MT46V16M16 • 167 MHz Clock, 333 Mb/s/p data rate • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two - one per byte) • Internal, pipelined double-data-rate
4	MT46V128M4	Micron Technology	Double Data Rate (DDR) SDRAM Double Data Rate (DDR) SDRAM MT46V128M4 – 32 Meg x 4 x 4 banks MT46V64M8 – 16 Meg x 8 x 4 banks MT46V32M16 – 8 Meg x 16 x 4 banks Features • VDD = VDD 2.5V ±0.2V, VDDQ = = 2.6V ±0.1V, VDDQ 2.5V ±0.2V = 2.6V ±0.1V (DDR400)1 • Bidirectional data
5	MT46V64M8	Micron Technology	Double Data Rate (DDR) SDRAM Double Data Rate (DDR) SDRAM MT46V128M4 – 32 Meg x 4 x 4 banks MT46V64M8 – 16 Meg x 8 x 4 banks MT46V32M16 – 8 Meg x 16 x 4 banks Features • VDD = VDD 2.5V ±0.2V, VDDQ = = 2.6V ±0.1V, VDDQ 2.5V ±0.2V = 2.6V ±0.1V (DDR400)1 • Bidirectional data
6	MT46V32M16	Micron Technology	Double Data Rate (DDR) SDRAM Double Data Rate (DDR) SDRAM MT46V128M4 – 32 Meg x 4 x 4 banks MT46V64M8 – 16 Meg x 8 x 4 banks MT46V32M16 – 8 Meg x 16 x 4 banks Features • VDD = VDD 2.5V ±0.2V, VDDQ = = 2.6V ±0.1V, VDDQ 2.5V ±0.2V = 2.6V ±0.1V (DDR400)1 • Bidirectional data
7	MT46V64M16	Micron Technology	DDR SDRAM c . U 4 t Double Data Rate (DDR) SDRAM e e – 64 Meg x 4 x 4 banks MT46V256M4 h S – 32 Meg x 8 x 4 banks MT46V128M8 a MT46V64M16 at – 16 Meg x 16 x 4 banks .D w w Features Options Marking w For the latest data sheet revisions, please refer to the Micro
8	MT46V64M4	Micron Technology	Double Data Rate (DDR) SDRAM Double Data Rate (DDR) SDRAM MT46V64M4 – 16 Meg x 4 x 4 banks MT46V32M8 – 8 Meg x 8 x 4 banks MT46V16M16 – 4 Meg x 16 x 4 banks Features • VDD VDD = = 2.5V 2.6V ±0.2V; ±0.1V; VDDQ VDDQ = = 2.5V 2.6V ±0.2V ±0.1V (DDR400)1 • Bidirectional d
9	MT46V2M32V1	Micron Technology	DOUBLE DATA RATE DDR SDRAM w w w .c om PRELIMINARY 64Mb: x32 DDR SDRAM MT46V2M32V1- 512K x 32 x 4 banks MT46V2M32 - 512K x 32 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds • Bidirectional data strobe (DQS) transm
10	MT46V4M32	Micron Technology	DOUBLE DATA RATE DDR SDRAM w w w • VDD = +2.5V ±0.125V, VDDQ = +2.5V ±0.125V • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture • Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle •
11	MT46V128M8	Micron Technology	DDR SDRAM c . U 4 t Double Data Rate (DDR) SDRAM e e – 64 Meg x 4 x 4 banks MT46V256M4 h S – 32 Meg x 8 x 4 banks MT46V128M8 a MT46V64M16 at – 16 Meg x 16 x 4 banks .D w w Features Options Marking w For the latest data sheet revisions, please refer to the Micro
12	MT46V256M4	Micron Technology	DDR SDRAM c . U 4 t Double Data Rate (DDR) SDRAM e e – 64 Meg x 4 x 4 banks MT46V256M4 h S – 32 Meg x 8 x 4 banks MT46V128M8 a MT46V64M16 at – 16 Meg x 16 x 4 banks .D w w Features Options Marking w For the latest data sheet revisions, please refer to the Micro
13	MT46V16M16	Micron Technology	Double Data Rate (DDR) SDRAM Double Data Rate (DDR) SDRAM MT46V64M4 – 16 Meg x 4 x 4 banks MT46V32M8 – 8 Meg x 8 x 4 banks MT46V16M16 – 4 Meg x 16 x 4 banks Features • VDD VDD = = 2.5V 2.6V ±0.2V; ±0.1V; VDDQ VDDQ = = 2.5V 2.6V ±0.2V ±0.1V (DDR400)1 • Bidirectional d
14	MT46V32M8	Micron Technology	Double Data Rate (DDR) SDRAM Double Data Rate (DDR) SDRAM MT46V64M4 – 16 Meg x 4 x 4 banks MT46V32M8 – 8 Meg x 8 x 4 banks MT46V16M16 – 4 Meg x 16 x 4 banks Features • VDD VDD = = 2.5V 2.6V ±0.2V; ±0.1V; VDDQ VDDQ = = 2.5V 2.6V ±0.2V ±0.1V (DDR400)1 • Bidirectional d
15	MT46V16M8	Micron Technology	(MT46Vxxx) DOUBLE DATA RATE DDR SDRAM c . U 4 t Double Data Rate (DDR) SDRAM e e8 Meg x 4 x 4 Banks MT46V32M4h – S – 4 Meg x 8 x 4 Banks MT46V16M8 a MT46V8M16 at – 2 Meg x 16 x 4 Banks .D w w Features Options Marking w For the latest data sheet revisions, please refer to the Micron Web s
16	MT46V8M16	Micron Technology	(MT46Vxxx) DOUBLE DATA RATE DDR SDRAM c . U 4 t Double Data Rate (DDR) SDRAM e e8 Meg x 4 x 4 Banks MT46V32M4h – S – 4 Meg x 8 x 4 Banks MT46V16M8 a MT46V8M16 at – 2 Meg x 16 x 4 Banks .D w w Features Options Marking w For the latest data sheet revisions, please refer to the Micron Web s
17	MT46V32M4	Micron Technology	(MT46Vxxx) DOUBLE DATA RATE DDR SDRAM c . U 4 t Double Data Rate (DDR) SDRAM e e8 Meg x 4 x 4 Banks MT46V32M4h – S – 4 Meg x 8 x 4 Banks MT46V16M8 a MT46V8M16 at – 2 Meg x 16 x 4 Banks .D w w Features Options Marking w For the latest data sheet revisions, please refer to the Micron Web s
18	MT46V2M32	Micron Technology	DOUBLE DATA RATE DDR SDRAM w w w .c om PRELIMINARY 64Mb: x32 DDR SDRAM MT46V2M32V1- 512K x 32 x 4 banks MT46V2M32 - 512K x 32 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds • Bidirectional data strobe (DQS) transm