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46V16M8 |
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| Part Number | 46V16M8 |
| Manufacturer | Micron Technology |
| Description | The 128Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quadbank DRAM. The 128Mb DDR SDRAM uses a double data rate architec... |
| Features |
• VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data www.DataSheet4U.com capture (x16 has two – one per byte) • Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle • Differential clock inputs (CK and CK#) • Commands entered on each positive CK edge • DQS edge-aligned with data for READs; centeraligned with data for WRITEs • DLL to align DQ and DQS transitions with CK • Four internal banks for concurrent operation • Data mask (DM) for masking write data (x16 has two – one p... |
| Document |
 46V16M8 Data Sheet
PDF 2.56MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 46V16M16 |
Micron Technology |
MT46V16M16 |
|
| 2 | 46V32M16 |
Micron Technology |
MT46V32M16 |
|
| 3 | 4600H |
Bourns Electronic Solutions |
Thick Film Conformal SIPs |
|
| 4 | 4600M |
Bourns Electronic Solutions |
Thick Film Conformal SIPs |
|
| 5 | 4600X |
Bourns Electronic Solutions |
Thick Film Conformal SIPs |
|