| No. | Partie # | Fabricant | Description | Fiche Technique |
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MT Semiconductor |
N-Channel MOSFET • rDS(ON) = 3.3mΩ, VGS = 10V, ID = 40A • rDS(ON) = 4.5mΩ, VGS = 4.5V, ID = 40A • High performance t rench t echnology for ext remely low rDS(ON) • Low gate charge • High power and current handling capability (FLANGE) DRAIN SOURCE DRAIN GATE G TO- |
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Hynix Semiconductor |
240pin DDR3 SDRAM Registered DIMM • • • • • • • • • • • • • Power Supply: VDD=1.35V (1.283V to 1.45V) VDDQ = 1.35V (1.283V to 1.45V) Backward Compatible with 1.5V DDR3 Memory Module VDDSPD=3.0V to 3.6V Functionality and operations comply with the DDR3L SDRAM datasheet 8 internal bank |
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Hynix Semiconductor |
240pin DDR3 SDRAM Unbeffered DIMM • VDD=1.5V +/- 0.075V • VDDQ=1.5V +/- 0.075V • VDDSPD=3.0V to 3.6V • Functionality and operations comply with the DDR3 SDRAM datasheet • 8 internal banks • Data transfer rates: PC3-10600, PC3-8500, or PC3-6400 • Bi-directional Differential Data Strob |
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Micon |
DDR3 SDRAM RDIMM DDR3 SDRAM RDIMM MT36JSF2G72PZ – 16GB Features • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module (RDIMM) • Fast data transfer rates: PC3-14900, PC3-12800, PC3-10600, |
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Hynix Semiconductor |
204pin DDR3 SDRAM SODIMM • Power Supply: VDD=1.35V (1.283V to 1.45V) • VDDQ = 1.35V (1.283V to 1.45V) • VDDSPD=3.0V to 3.6V • Functionality and operations comply with the DDR3 SDRAM datasheet • 8 internal banks • Data transfer rates: PC3-10600, PC3-8500, or PC3-6400 • Bi-dir |
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Hynix Semiconductor |
DDR3L SDRAM • Power Supply: VDD=1.35V (1.283V to 1.45V) • VDDQ = 1.35V (1.283V to 1.45V) • VDDSPD=3.0V to 3.6V • Backward Compatible with 1.5V DDR3 Memory module • 8 internal banks • Data transfer rates:PC3-12800, |
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Toshiba Semiconductor |
VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION · · Low Noise Figure :NF=1.1dB (@f=2GHz) High Gain:|S21e| =12.0dB (@f=2GHz) 2 Marking 3 R4 1 2 TESM JEDEC JEITA Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dis |
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Hynix Semiconductor |
DDR3 SDRAM Registered DIMM • • • • • • • • • • • • Power Supply: VDD=1.5V (1.425V to 1.575V) VDDQ = 1.5V (1.425V to 1.575V) VDDSPD=3.0V to 3.6V Functionality and operations comply with the DDR3L SDRAM datasheet 8 internal banks Data transfer rates: PC3-10600, PC3-8500 Bi-Direc |
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MT Semiconductor |
60V N-Channel MOSFET • 50A, 60V, RDS(on) = 0.01Ω @VGS = 10 V • Low gate charge ( typical 43 nC) • Low Crss ( typical 85 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating GDS TO-220 Absolute Maximum Rat |
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ON Semiconductor |
Zener Transient Voltage Suppressor • Stand−off Voltage: 5.0 V − 58 V • Peak Power − 200 W @ 1 ms (1PMT5.0A − 1PMT36A) − 175 W @ 1 ms (1PMT40A − 1PMT58A) • Maximum Clamp Voltage @ Peak Pulse Current • Low Leakag |
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Micon |
DDR3 SDRAM VLP RDIMM DDR3 SDRAM VLP RDIMM MT36JDZS2G72PZ – 16GB Features • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line very low profile memory module (VLP RDIMM) • Fast data transfer rates: PC3-14 |
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Zetex Semiconductors |
ANGLE SENSOR · Measures the magnetic field hrot (> 50kA/m) generated by a permanent magnet which rotates over the sensor · Magnetic field hrot parallel to the chip surface causes a sinusoidal output signal · Package : SM-8 (available on 12mm tape) PINOUT DIAGRAM |
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Hynix Semiconductor |
DDR3L SDRAM • Power Supply: VDD=1.35V (1.283V to 1.45V) • VDDQ = 1.35V (1.283V to 1.45V) • VDDSPD=3.0V to 3.6V • Backward Compatible with 1.5V DDR3 Memory module • 8 internal banks • Data transfer rates:PC3-12800, |
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Toshiba Semiconductor |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
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Toshiba Semiconductor |
VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
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Toshiba Semiconductor |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE ¾ 8.5 ¾ Typ. 4.5 8.5 11.5 1.4 Max ¾ ¾ ¾ 2.2 Unit GHz dB dB Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Reverse transfer capacitance Symbol ICBO IEBO hFE Cre Test Conditi |
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Toshiba Semiconductor |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
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Toshiba Semiconductor |
VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION · · Low Noise Figure :NF=1.2dB (@f=2GHz) High Gain:|S21e| =10dB (@f=2GHz) 2 Marking 3 Q7 1 2 TESM JEDEC JEITA Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissi |
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Toshiba Semiconductor |
Silicon NPN Epitaxial Planar Type Transistor ay cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing t |
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Toshiba Semiconductor |
Silicon NPN Epitaxial Planar Type Transistor ure/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliabi |
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