| No. | Partie # | Fabricant | Description | Fiche Technique |
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MagnaChip |
N-Channel MOSFET The MDE1991 uses advanced MagnaChip’s MV MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low Power Dr |
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MagnaChip |
N-Channel Trench MOSFET VDS = 40V ID = 66A @VGS = 10V RDS(ON) < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V Applications Inverters General purpose applications D G S Absolute Maximum Ratings (TC =25oC unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Continuo |
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MagnaChip |
Single N-channel MOSFET The MDE10N026RH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low Power D |
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MagnaChip |
N-channel MOSFET The MDES10N025RH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low Power |
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MagnaChip |
N-channel MOSFET VDS = 135V ID = 180A @VGS = 10V Very low on-resistance RDS(ON) < 4.5 mΩ @VGS = 10V 175 oC operating temperature 100% UIL Tested 100% Rg Tested 100% △VDS Tested Tab D Pin 4, Tab 1 7 TO-263-7L Absolute Maximum Ratings (TJ = 25 oC) C |
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MagnaChip |
Single N-channel Trench MOSFET The MDES08N019RH uses advanced Magnachip’s MV MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. MDES08N019RH is suitable device for Motor Drive applications and general purp |
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MagnaChip |
N-Channel MOSFET VDS = 80V ID = 120 A @VGS = 10V RDS(ON) < 5.4 mΩ @VGS = 10V 175 oC operating temperature 100% UIL Tested 100% Rg Tested 100% △VDS Tested D D G S TO-263 Absolute Maximum Ratings (TJ = 25oC) Characteristics Drain-Source Vol |
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MagnaChip |
N-Channel MOSFET The MDE1932 uses advanced Magnachip’s MV MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such |
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MagnaChip |
Dual Enhancement N-P Channel Trench MOSFET The MDE9754 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in on-state resistance, switching performance and reliability. Low RDS(ON), low gate charge can be offering superior benefit in the application. N-Channel VD |
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MagnaChip |
N-channel MOSFET • Trench power MOSFET technology • N-channel, normal level • Enhanced avalanche ruggedness • 100% UIS and Rg tested • Maximum 175°C junction temperature APPLICATIONS • DC/DC and AC/DC converters • BLDC motor drive systems • Battery powered systems |
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MagnaChip |
N-channel MOSFET The MDE1991RH uses advanced Magnachip’s MV MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low Power |
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