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MDE08N054RH |
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| Part Number | MDE08N054RH |
| Manufacturer | MagnaChip |
| Description | The MDE08N054RH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. These devices can also be utilize... |
| Features |
VDS = 80V
ID = 120 A @VGS = 10V
RDS(ON)
< 5.4 mΩ @VGS = 10V
175 oC operating temperature
100% UIL Tested
100% Rg Tested
100% △VDS Tested
D D
G S
TO-263
Absolute Maximum Ratings (TJ = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
TC=25oC (Silicon Limited)
Continuous Drain Current (1) Pulsed Drain Current (2)
TC=25oC (Package Limited) TC=100oC (Silicon Limited) TA=25oC
Power Dissipation Single Pulse Avalanche Energy (3)
TC=25oC TC=100oC TA=25oC
Junction and Storage Temperature Range
G
Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg
Thermal Character... |
| Document |
 MDE08N054RH Data Sheet
PDF 1.08MB |
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