| No. | Partie # | Fabricant | Description | Fiche Technique |
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MOS-TECH |
N-Channel Power MOSFET ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TO-252 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 30V 50A 6@ VGS=10V 9@ VGS=4.5V NOTE：The MT50N03 is available in a lead-free package ABSOL |
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MOS-TECH |
P-Channel Power MOSFET ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● DFN3X2‐8L package NOTE：The MT5853B is available in a lead-free package VDSS ‐20V PRODUCT SUMMARY ID RDS(ON) (mΩ) |
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MOS-TECH |
P-Channel Power MOSFET ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● DFN3X2‐8L package NOTE：The MT5853 is available in a lead-free package VDSS ‐20V PRODUCT SUMMARY ID RDS(ON) (mΩ) Typ |
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MOS-TECH |
P-Channel Power MOSFET ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TO-252 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ -30V -50A 20@ VGS=-10V 28 @ VGS=-4.5V NOTE：The MT50P03 is available in a lead-free package |
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MOS-TECH |
N-Channel Power MOSFET Max rDS(on) = 11.2 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 12.4 mΩ at VGS = 4.5 V, ID = 10 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant Oct 2011 General Description This N-Channel MOSF |
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MOS-TECH |
N-Channel Power MOSFET Max rDS(on) = 12.5 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 24.5 mΩ at VGS = 4.5 V, ID = 10 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant Jan 2011 General Description This N-Channel MOSF |
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