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MT50P03 |
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| Part Number | MT50P03 |
| Manufacturer | MOS-TECH |
| Description | Mos-Tech Semiconductor Co.,LTD. P-Channel Enhancement Mode Field Effect Transistor MT50P03 FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ●... |
| Features |
● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TO-252 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ -30V -50A 20@ VGS=-10V 28 @ VGS=-4.5V NOTE：The MT50P03 is available in a lead-free package G S DS G D ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ Symbol VDS VGS ID Limit -30 ±20 -50 - Pulse d b IDM -105 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG -1.... |
| Document |
 MT50P03 Data Sheet
PDF 248.82KB |
| Distributor | Stock | Price | Buy |
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