| No. | Partie # | Fabricant | Description | Fiche Technique |
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Micron Technology |
1M x 1 DRAM heet 4 U .com www.DataSheet4U.com m et4U.co DataSheet4U.com DataSh ee DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com m et4U.co DataSheet4U.com DataSh ee DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.Dat |
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Micron Technology |
64K x 1 DRAM |
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Micron |
DDR4 SDRAM DDR4 SDRAM MT40A2G4 MT40A1G8 MT40A512M16 Features • VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V, –125mV, +250mV • On-die, internal, adjustable VREFDQ generation • 1.2V pseudo open-drain I/O • TC maximum up to 95°C – 64ms, 8192-cycle refresh up to 85°C – 3 |
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Micron |
256K x 1 DRAM |
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Micron |
Automotive DDR4 SDRAM Automotive DDR4 SDRAM MT40A512M8 MT40A256M16 Features • VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V –125mV/+250mV • On-die, internal, adjustable VREFDQ generation • 1.2V pseudo open-drain I/O • Refresh maximum interval time at TC temperature range: – 64ms |
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Micron Technology |
64K x 1 DRAM |
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Micron Technology |
MT46V32M16 • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data www.DataSheet4U.com capture (x16 has two – one per byte) • Internal, pipelined double-data-rate (DDR) architectur |
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Micron Technology |
Mobile LPDDR2 SDRAM Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features • Ultra low-voltage core and I/O power supplies – VDD2 = 1.14 –1.30V – VDDCA/VDDQ = 1.14 –1.30V – VDD1 = 1. |
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Micron Technology |
DDR3L SDRAM • VDD = VDDQ = 1.35V (1.283 –1.45V) • Backward compatible to VDD = VDDQ = 1.5V ±0.075V – Supports DDR3L devices to be backward compatible in 1.5V applications • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock |
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Micron Technology |
TwinDie 1.35V DDR3L SDRAM • Uses 4Gb Micron die • Two ranks (includes dual CS#, ODT, CKE, and ZQ balls) • Each rank has eight internal banks for concurrent operation • VDD = V DDQ = 1.35V (1.283 –1.45V); backward compatible to V DD = V DDQ = 1.5V ±0.075V • 1.35V center-termina |
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Micron |
1.2V DDR4 SDRAM • Uses 8Gb Micron die • Two ranks (includes dual CS#, ODT, and CKE balls) • Each rank has 4 groups of 4 internal banks for con- current operation • VDD = VDDQ = 1.2V (1.14 –1.26V) • 1.2V VDDQ-terminated I/O • JEDEC-standard ball-out • Low-profile pack |
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Micron Technology |
MT46V16M8 • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data www.DataSheet4U.com capture (x16 has two – one per byte) • Internal, pipelined double-data-rate (DDR) architectur |
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Micron Technology |
MT46V16M16 • 167 MHz Clock, 333 Mb/s/p data rate • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two - one per byte) • Internal, pipelined double-data-rate |
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Micron Technology |
32 Meg x 16 x 8 Banks 1.35V DDR3L-RS SDRAM • Uses two 4Gb x16 Micron die in one package • Two ranks (includes dual CS#, ODT, CKE and ZQ balls) • VDD = V DDQ = 1.35V (1.283 –1.425V); backward compatible to 1.5V operation • 1.35V center-terminated push/pull I/O • JEDEC-standard ball-out • Low-pr |
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Micron Technology |
MOBILE SDRAM Mobile SDRAM MT48LC8M32LF, MT48V8M32LF, MT48H8M32LF - 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/mobile Features • • • • • • • • • • • • • • • Low voltage power supply Partial array self |
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Micron Technology |
MOBILE SDRAM Mobile SDRAM MT48LC8M32LF, MT48V8M32LF, MT48H8M32LF - 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/mobile Features • • • • • • • • • • • • • • • Low voltage power supply Partial array self |
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Micron Technology |
1.35V DDR3L SDRAM • VDD = VDDQ = 1.35V (1.283 –1.45V) • Backward-compatible to VDD = VDDQ = 1.5V ±0.075V • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-die termin |
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Micron Technology |
1.35V DDR3L SDRAM • Uses two 8Gb x16 Micron die in one package • Two ranks (includes dual CS#, ODT, CKE, and ZQ balls) • VDD = VDDQ = 1.35V (1.283 –1.425V); backward com- patible to 1.5V operation • 1.35V center-terminated push/pull I/O • JEDEC-standard ballout • Low-p |
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Micron |
Automotive DDR4 SDRAM Automotive DDR4 SDRAM MT40A512M8 MT40A256M16 Features • VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V –125mV/+250mV • On-die, internal, adjustable VREFDQ generation • 1.2V pseudo open-drain I/O • Refresh maximum interval time at TC temperature range: – 64ms |
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Micron Technology |
Mobile LPDDR2 SDRAM Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4, MT42L384M32D3 Features • Ultra low-voltage core and I/O power supplies – VDD2 = 1.14 –1.30V – VDDCA/VDDQ = 1.14 –1.30V – VDD1 |
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