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Hitachi Semiconductor |
Silicon Diode • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS270A Cathode band Navy Blue Package Code MHD Outline 1 Cat |
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Rectron Semiconductor |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER * * * * * * * * * Low power loss, high efficiency Low leakage Low forward voltage drop High current capability High speed switching High surge capabitity High reliability Guard ring construction on dic Anti-ESD SS20 THRU SS60 SOD-123F .114 (2.9) . |
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ON Semiconductor |
Surface Mount Schottky Power Rectifier epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features • Compact Package with J−Bend Leads Ideal |
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SEC |
CMOS Omnipolar High Sensitivity Micropower Hall Switch and Benefits – – – – Operation down to 2.5V Micropower consumption for battery powered applications High sensitivity for direct reed switch replacement applications Omnipolar, output switches with absolute value of North or South pole from magnet 3 |
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Tuofeng Semiconductor |
N-CHANNEL MOSFET ● RDS(ON)=3.8Ω@VGS=10V ● Ultra Low gate charge(tupical 9.0nC) ● Low reverse transfer capacitance(Crss=typical 5.0pF) ● Fast switching capability ● Avalanche energy specified ● Improved dv/dt capability,high ruggedness ■ SYMBOL ■ ORDERING INF ORMATIO |
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Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode use this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the To |
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ON Semiconductor |
Surface Mount Schottky Power Rectifier epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features • Compact Package with J−Bend Leads Ideal |
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Siemens Semiconductor |
SOT-23 LED / Diffused q q q q q q colored, diffused package extreme wide-angle LED for use as optical indicator suitable for all SMT assembly and soldering methods available taped on reel (8 mm tape) load dump resistant acc. to DIN 40839 Typ Type Emissionsfarbe Color o |
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Siemens Semiconductor |
SIPMOS Small-Signal Transistor s, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 200 1.4 0.1 8 10 0.95 1.1 2 1 50 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold v |
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Siemens Semiconductor |
SIPMOS Small-Signal Transistor at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 1.4 0.1 8 10 0.25 0.45 2 1 50 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold volt |
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MIC |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER l For surface mount applications l Metal-Semiconductor Junction with Guarding l Epitaxial Construction l Metal-Semiconductor Junction with Guarding l Very Low forward voltage drop l High Current capability l For use in low voltage, high frequency inv |
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E-DA SEMICONDUCTOR |
MINI SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Green 0.165 4.20 0.130 3.30 0.106 2.70 0.09 2.30 0.041 1.05 0.037 0.90 • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Metal to silicon rectifier. majority carrier conduction |
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Jingdao Microelectronics |
Surface Mount Schottky Barrier Rectifier • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protect |
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Jingdao Microelectronics |
Surface Mount Schottky Barrier Rectifier • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protect |
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Taiwan Semiconductor |
Schottky Barrier Surface Mount Rectifier ● AEC-Q101 qualified ● Very low profile - typical height of 0.68mm ● Low power loss, high efficiency ● Ideal for automated placement ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPL |
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Sanyo Semicon Device |
DC/DC Converter Applications · Low ON-resistance. · 4V drive. Package Dimensions unit:mm 2116 [FSS216] 8 5 0.3 4.4 6.0 5.0 1.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · 4V drive. N-Channel Silicon MOSFET FSS232 Load Switching Applications Package Dimensions unit:mm 2116 [FSS232] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to |
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Sanyo Semicon Device |
DC/DC Converter Applications · Low ON resistance. · 4V drive. · Ultrahigh-speed switching. Package Dimensions unit:mm 2116 [FSS242] 8 5 0.3 4.4 6.0 5.0 1.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Curr |
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Sanyo Semicon Device |
DC / DC Converter Applications • • • Package Dimensions unit : mm 2116 [FSS244] 8 5 0.3 4.4 6.0 0.2 5.0 Low ON-resistance. 4V drive. Ultrahigh speed switching. 1.5 1.8max 1 4 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 Spe |
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Toshiba Semiconductor |
Diode the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test re |
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