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MIC MMB DataSheet

No. Partie # Fabricant Description Fiche Technique
1
MMBZ5258ELT1G

ON Semiconductor
Zener Voltage Regulators

• 225 mW Rating on FR−4 or FR−5 Board
• Zener Voltage Range − 2.4 V to 91 V
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• ESD Rating of Class 3 (>16 kV) per Human Body Model
• Peak Power
Datasheet
2
SMMBD301LT3G

ON Semiconductor
Silicon Hot-Carrier Diodes

• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
• Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V
• Low Reverse Leakage − IR = 13 nAdc (Typ) MBD301, MMBD301
• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Ch
Datasheet
3
MMBD7000LT1G

ON Semiconductor
Dual Switching Diode

• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com MAXIMUM RATINGS (EA
Datasheet
4
SMMBT2907AL

ON Semiconductor
PNP Silicon Transistors

• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Val
Datasheet
5
SMMBT4401L

ON Semiconductor
Switching Transistor

• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector −
Datasheet
6
HD6340

Hitachi Semiconductor
PTM(Programmble Timer Module)
Datasheet
7
MMBD4148CC

Fairchild Semiconductor
Small Signal Diode
Datasheet
8
MMBD330T1G

ON Semiconductor
Schottky Barrier Diodes

 Extremely Low Minority Carrier Lifetime
 Very Low Capacitance
 Low Reverse Leakage
 Available in 8 mm Tape and Reel
 AEC Qualified and PPAP Capable
 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requir
Datasheet
9
MMBD101LT1G

ON Semiconductor
Schottky Barrier Diodes

 Low Noise Figure − 6.0 dB Typ @ 1.0 GHz
 Very Low Capacitance − Less Than 1.0 pF
 High Forward Conductance − 0.5 V (Typ) @ IF = 10 mA
 These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltag
Datasheet
10
MMBZ27VALT1G

ON Semiconductor
Zener Diode

• SOT−23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration
• Standard Zener Breakdown Voltage Range − 5.6 V to 47 V
• Peak Power − 24 or 40 W @ 1.0 ms (Unidirectional), per Figure 6 Waveform
• ES
Datasheet
11
HD68B40

Hitachi Semiconductor
PTM(Programmble Timer Module)
Datasheet
12
MMBD4148

Fairchild Semiconductor
Small Signal Diode
Datasheet
13
SMMBD770T1G

ON Semiconductor
Schottky Barrier Diodes

 Extremely Low Minority Carrier Lifetime
 Very Low Capacitance
 Low Reverse Leakage
 Available in 8 mm Tape and Reel
 AEC Qualified and PPAP Capable
 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requir
Datasheet
14
NSVMMBD354LT1G

ON Semiconductor
Dual Hot Carrier Mixer Diodes

• Very Low Capacitance − Less Than 1.0 pF @ Zero V
• Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA
• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These
Datasheet
15
MMBT3906

ON Semiconductor
PNP General-Purpose Amplifier
Datasheet
16
MMBT4403

Micro Commercial Components
PNP General Purpose Amplifier


•   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MMBT4403 Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation C Pin Configuration Top View PNP General Purpos
Datasheet
17
MMBZ5256B

Micro Commercial Components
410 mW Zener Diode 2.4 to 39 Volts




• Wide Voltage Range Available Small Outline Package For Space Savings High Temp Soldering: 250°C for 10 Seconds At Terminals Surface Mount Package Maximum Ratings


• Operating Junction Temperature: -55°C to +150°C Storage Temperature: -55
Datasheet
18
MMBR930L

Motorola Semiconductor
NPN Silicon High Frequency Transistor
Datasheet
19
MMBZ5249B

Fairchild Semiconductor
Zener Diodes
Datasheet
20
MMBT2222A

Taiwan Semiconductor
NPN Transistor

● Low power loss, high efficiency
● Ideal for automated placement
● High surge current capability
● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21 APPLICATIONS
● Switching mode p
Datasheet



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