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Leshan Radio Company |
General Purpose Transistors |
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Leshan Radio Company |
General Purpose Transistors |
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Leshan Radio Company |
General Purpose Transistors |
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Leshan Radio Company |
General Purpose Transistors |
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Leshan Radio Company |
General Purpose Transistors ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 ƽPb-Free Package is available. www.DataSheet4U.DcoEmVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L2SA812QLT1 M8 3000/Tape&Reel L2SA812QLT1G L2SA81 |
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Leshan Radio Company |
Medium Power Transistor S-L2SA1036KQLT1G Series 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3 3) We declare that the material of product compliance with RoHS requirements. 4) S- Prefix for Automotive and Other Applications Requiring |
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Leshan Radio Company |
General Purpose Transistor j Junction temperature Tstg Storage temperature Ratings -25 -20 -4 -7 00 150 ＋125 -55～＋125 Unit V V V mA mW ℃ ℃ 3 COLLECTOR 1 BASE ORDERING INFORMATION 2 EMITTER Device Marking L2SA1365ELT1G S-L2SA1365ELT1G L2SA1365ELT3G S-L2SA1365ELT3G L2SA |
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Leshan Radio Company |
Medium Power Transistor 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Pb-Free Package May be Available. The G.Suffix Denotes a Pb-Free Lead Finish FStructure Epitaxial planar type PNP silicon transistor L2SA1036KPLT1 L2SA1036KQLT1 L2SA10 |
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Leshan Radio Company |
General Purpose Transistors PNP Silicon utput capacitance (V CB = – 12 V, I E= 0A, f =1MHz ) V CE(sat) h FE fT C ob — 120 — — — – – 140 4.0 -0.5 560 – – 5.0 V – – MHz pF Symbol V (BR)CEO Min – 50 –6 – 60 — — Typ — — — — — Max — — — – 0.1 – 0.1 Unit V V V µA µA V (BR)EBO V (BR)CBO I CBO |
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Leshan Radio Company |
Low frequency transistor 1) A collector current is large. 2) Collector saturation voltage is low. VCE (sat) ≤ 250mA At IC = −200mA / IB = −10mA 3) We declare that the material of product compliance with RoHS requirements. 4 ) S- Prefix for Automotive and Other Applications R |
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Leshan Radio Company |
General Purpose Transistors -89 COLLECTOR 3 1 BASE 2 EMITTER !Electrical characteristics (Ta=25°C) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage BVEBO Collector cutoff current ICBO E |
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Leshan Radio Company |
General Purpose Transistors -89 COLLECTOR 3 1 BASE 2 EMITTER !Electrical characteristics (Ta=25°C) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage BVEBO Collector cutoff current ICBO E |
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Leshan Radio Company |
General Purpose Transistors -89 COLLECTOR 3 1 BASE 2 EMITTER !Electrical characteristics (Ta=25°C) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage BVEBO Collector cutoff current ICBO E |
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Leshan Radio Company |
General Purpose Transistors -89 COLLECTOR 3 1 BASE 2 EMITTER !Electrical characteristics (Ta=25°C) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage BVEBO Collector cutoff current ICBO E |
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Leshan Radio Company |
General Purpose Transistors -89 COLLECTOR 3 1 BASE 2 EMITTER !Electrical characteristics (Ta=25°C) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage BVEBO Collector cutoff current ICBO E |
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Leshan Radio Company |
General Purpose Transistors -89 COLLECTOR 3 1 BASE 2 EMITTER !Electrical characteristics (Ta=25°C) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage BVEBO Collector cutoff current ICBO E |
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Leshan Radio Company |
General Purpose Transistors ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 ƽPb-Free Package is available. www.DataSheet4U.DcoEmVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L2SA812QLT1 M8 3000/Tape&Reel L2SA812QLT1G L2SA81 |
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Leshan Radio Company |
General Purpose Transistors ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. S-L2SA812QLT1G Series ƽNPN complement: L2SC1623 ƽWe declare that the material of product compliance with RoHS requirements. 3 ƽS- Prefix for Automotive and Other Applications Requiring Unique S |
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Leshan Radio Company |
Medium Power Transistor 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Pb-Free Package May be Available. The G.Suffix Denotes a Pb-Free Lead Finish FStructure Epitaxial planar type PNP silicon transistor FDEVICE MARKING 1) L2SA1036KPLT1=HP |
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Leshan Radio Company |
General Purpose Transistors z We declare that the material of product compliance with RoHS requirements. zS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SA1037AKQLT1G Series S-L2SA10 |
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