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L2SA812QLT3G |
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| Part Number | L2SA812QLT3G |
| Manufacturer | Leshan Radio Company |
| Description | LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812QLT1G Series FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. S-L2SA812QLT1G Series ƽNPN complement: L2SC1623 ƽWe declare... |
| Features |
CHARATEERISTICS
-150
mAdc
Characteristic Total Device Dissipation FR-5 Board, (1) TA=25oC Derate above 25oC Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate, (2) TA=25 oC Derate above 25oC Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol PD
R θJA PD
R θJA Tj ,Tstg
Max
200 1.8 556
200 2.4 417 -55 to +150
Unit
mW mW/oC oC/W
mW mW/oC oC/W
oC
Rev.O 1/5
LESHAN RADIO COMPANY, LTD.
L2SA812QLT1G Series S-L2SA812QLT1G Series
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol Min Typ Max
OFF CHAR... |
| Document |
 L2SA812QLT3G Data Sheet
PDF 185.41KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | L2SA812QLT1 |
Leshan Radio Company |
General Purpose Transistors |
|
| 2 | L2SA812QLT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 3 | L2SA812RLT1 |
Leshan Radio Company |
General Purpose Transistors |
|
| 4 | L2SA812RLT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 5 | L2SA812RLT3G |
Leshan Radio Company |
General Purpose Transistors |
|