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PNP Transistor 3 2 1 Wide safe Operating Area. Complementary to 2SC2703 1. BASE 2. COLLECTOR 3. EMITTER 2SA940(PNP) TO-220 Transistor TO-220 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Dimensions in inches and (millimeters) Symbol VCBO VCEO VEBO IC P |
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PNP Transistor Large IC. ICMax.= -500 mA Low VCE(sat). Ideal for low-voltage operation. 2SA1036 SOT-23 Transistor(PNP) SOT-23 MARKING : HP, HQ, HR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base |
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NPN Transistor Large IC. IC= -500 mA Low VCE(sat). Ideal for low-voltage operation. MARKING : HP, HQ, HR 2.80 1.60 0.15 1.90 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Dimensions in inches and (millimeters) Symbol VCBO VCEO VEBO IC PC TJ Tstg Paramet |
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PNP Transistor High voltage: VCEO=-50V(Min.) High hFE: hFE=70~400 Low noise: NF=1dB(Typ.),10dB(Max.) Complementary to 2SC2458 2SA1048 TO-92S Transistor (PNP) TO-92S MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Par |
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PNP Transistor High breakdown voltage MARKING: M MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -55 VCEO Collector-Emitter Voltage -50 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuou |
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Bipolar Transistors For low-frequency power amplification and driver amplification MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage 2SA719 2SA720 VCEO Collector-Emitter Voltage 2SA719 2SA720 VEBO Emitter-Base Voltage |
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PNP Transistor Strobe Flash Applications Medium Power Amplifier Applications Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A) Low collector saturation voltage : VCE (sat) = −1.0 V (max) (IC = −4 |
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PNP Transistor High breakdown voltage. (BVCEO = -120V) Complements the 2SC4102 2SA1579 SOT-323 Transistor(PNP) SOT-323 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Vo |
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NPN Transistor Complementary to 2SC2705 Small collector output capacitance: Cob=2.5pF(Typ.) High transition frequency: fT=200MHz(Typ.) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Coll |
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PNP Transistor 3 2 1 HIGH CURRENT SWITCHING APPLICATIONS. Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A High Speed Swithing Time : tstg = 1.0us (Typ.) Complementary to 2SC2562 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol |
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Bipolar Transistors For low-frequency power amplification and driver amplification MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage 2SA719 2SA720 VCEO Collector-Emitter Voltage 2SA719 2SA720 VEBO Emitter-Base Voltage |
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PNP Transistor High breakdown voltage Adoption of MBIT process Excellent hFE linearity MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter |
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PNP Transistor High breadown voltage Excellent hFE linearlity Marking: AK 1. BASE 2. COLLECTOR 3. EMITTER 2SA1740 SOT-89 Transistor(PNP) SOT-89 4.6 1.6 1.4 4.4 1.8 1.4 B 2.6 4.25 2.4 3.75 0.44 0.37 0.8 MIN 0.13 B 0.53 0.48 0.35 0.40 2x) 1.5 3.0 |
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