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2SA1700 |
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| Part Number | 2SA1700 |
| Manufacturer | LGE |
| Description | 1.BASE 2.COLLECTOR 3.EMITTER 2SA1700(PNP) TO-251/TO-252-2L Transistor TO-251 1 23 Features High breakdown voltage Adoption of MBIT process Excellent hFE linearity MAXIMUM RATINGS (TA=25℃ unless ot... |
| Features |
High breakdown voltage Adoption of MBIT process Excellent hFE linearity
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-400
V
VCEO
Collector-Emitter Voltage
-400
V
VEBO
Emitter-Base Voltage
-5 V
IC
Collector Current –Continuous -0.2 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless TO-252-2L Dimensions in inches and (millimeters) otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector... |
| Document |
 2SA1700 Data Sheet
PDF 202.54KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1700 |
INCHANGE |
PNP Transistor |
|
| 2 | 2SA1700 |
Sanyo Semicon Device |
PNP Epitaxial Silicon Transistor |
|
| 3 | 2SA1700 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 4 | 2SA1700 |
GME |
PNP Epitaxial Planar Silicon Transistor |
|
| 5 | 2SA1700 |
UTC |
PNP EPITAXIAL SILICON TRANSISTOR |
|