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Kexin |
N-Channel MOSFET rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A Qg(tot) = 41nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -0 |
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Kexin |
N-Channel MOSFET rDS(ON) =24m (Typ.), VGS = 10V, ID =44A Qg(tot) = 24nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -0.1 |
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Kexin |
P-Channel MOSFET -16 A, -20 V. RDS(on) = 0.08 Ù @ VGS = -4.5 V RDS(on) = 0.11 Ù @ VGS = -2.5 V. Critical DC electrical parameters specified at elevated temperature. High density cell design for extremely low RDS(on). +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 |
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Guangdong Kexin Industrial |
N-Channel SMPS Power MOSFET Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness +0.2 8.7-0.2 +0.1 1.27-0.1 TO-263 +0.1 1.27-0.1 +0.2 4.57-0.2 Unit: mm Reduced Miller Capacitance and Low Input Capacitance Improve |
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Kexin |
N-Channel MOSFET rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A Qg(tot) = 82nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -0 |
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Kexin |
N-Channel MOSFET rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A Qg(tot) = 39nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -0 |
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Kexin |
N-Channel MOSFET 22 A, 150 V. RDS(ON) = 80 m @ VGS = 10 V RDS(ON) = 90 m @ VGS = 6 V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 |
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Kexin |
N-Channel MOSFET rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A Qg(tot) = 26nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -0. |
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Kexin |
N-Channel MOSFET 19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V Low gate charge (27 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 |
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Kexin |
N-Channel MOSFET rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A Qg(tot) = 84nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 - |
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Kexin |
N-Channel MOSFET rDS(ON) =32m (Typ.), VGS = 10V, ID =32A Qg(tot) = 18.5nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -0 |
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