| No. | Partie # | Fabricant | Description | Fiche Technique |
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KIA |
N-CHANNEL MOSFET RDS(ON)=4.1Ω@VGS=10V. Low gate charge (typical 9nC) High ruggedness Fast switching capability Avalanche energy specified Improved dv/dt capability 3. Pin configuration Pin 1 2 3 4 1 of 6 Function Gate Drain Source Drain Rev 1.1 JAN 201 |
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KIA |
N-CHANNEL MOSFET RDS(ON)=4.1Ω@VGS=10V. Low gate charge (typical 9nC) High ruggedness Fast switching capability Avalanche energy specified Improved dv/dt capability 3. Pin configuration Pin 1 2 3 4 1 of 6 Function Gate Drain Source Drain Rev 1.1 JAN 201 |
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