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KIA2N60H |
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| Part Number | KIA2N60H |
| Manufacturer | KIA |
| Description | The KIA2N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, mo... |
| Features |
RDS(ON)=4.1Ω@VGS=10V. Low gate charge (typical 9nC) High ruggedness Fast switching capability Avalanche energy specified Improved dv/dt capability 3. Pin configuration Pin 1 2 3 4 1 of 6 Function Gate Drain Source Drain Rev 1.1 JAN 2014 KIA SEMICONDUCTORS 2.0A, 600V N-CHANNEL MOSFET 2N60H 4. Absolute maximum ratings Parameter Symbol Drain-source voltage Gate-source voltage Drain current continuous TC=25ºC TC=100ºC Drain current pulsed (note1) Avalanche Enlsed Repetitive (note1) Single pulse (note2) Peak diode recovery dv/dt (note3) VDSS VGSS ID IDP EAR EAS dv/dt T... |
| Document |
 KIA2N60H Data Sheet
PDF 485.47KB |
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