| No. | Partie # | Fabricant | Description | Fiche Technique |
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KIA |
N-CHANNEL MOSFET n RDS(on)=0.32Ω @ VGS=10V n Low gate charge ( typical 45nC) n Fast switching capability n Avalanche energy specified n Improved dv/dt capability 3. Pin configuration Pin 1 2 3 1 of 6 Function Gate Drain Source Rev 1.3 SEP 2014 KIA SEMICONDUCTORS |
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KIA |
N-CHANNEL MOSFET n RDS(on)=0.32Ω @ VGS=10V n Low gate charge ( typical 45nC) n Fast switching capability n Avalanche energy specified n Improved dv/dt capability 3. Pin configuration Pin 1 2 3 1 of 6 Function Gate Drain Source Rev 1.3 SEP 2014 KIA SEMICONDUCTORS |
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