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Jingdao |
PNP power transistor 20 10 1 0.001 3 6 9 12 Ic（A） Pc － Tj 125 100 75 50 25 0 40 80 120 160 200 Tj（℃） 1 0.1 0.01 1 10 100 Vce（V）－ 1000 Ic （A ） 13009 Jingdao Electronic Corporation V01 2/3 Shenzhen Jingdao Electronic Co.,Ltd. ： TO-220 ( ：mm， ±0.1 |
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Jingdao |
Bipolar Junction Transistor Features of good high temperature High switching speed 3．PACKAGE TO-220 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Vol |
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Jingdao |
NPN power transistor 30 Vce=5V 20 10 1 0.001 0.01 0.1 0.5 Ic（A） Pc － Tj 15 12 9 6 3 0 40 80 120 160 200 Tj（℃） 0.1 0.01 0.001 1 10 100 Vce（V）－ 1000 Ic （A ） 13001-A Jingdao Electronic Corporation V01 2/3 Shenzhen Jingdao Electronic Co.,Ltd. ： |
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Jingdao |
Bipolar Junction Transistor Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-126D 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless speci |
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Jingdao Electronic |
Bipolar Junction Transistor High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-126D 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) |
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Jingdao |
NPN power transistor 0 10 1 0.01 0.1 1 2 4 Ic（A） Pc － Tj 50 40 30 20 10 0 40 80 120 160 200 Tj（℃） 0.1 0.01 1 10 100 1000 Vce（V）－ Ic（A） 13005DL Jingdao Electronic Corporation V01 2/3 Shenzhen Jingdao Electronic Co.,Ltd. ： SOT-82 ( ：mm， ±0.1mm) T |
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Jingdao |
NPN power transistor 50 40 30 Vce=5V 20 10 1 0.001 0.01 0.1 0.45 Ic（A） Pc － Tj 15 12 9 6 3 0 40 80 120 160 200 Tj（℃） 0.1 0.01 0.001 1 10 100 Vce（V）－ 1000 Ic （A ） 13001-2 Jingdao Electronic Corporation V01 2/3 Shenzhen Jingdao Electronic C |
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Jingdao |
Bipolar Junction Transistor High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-826 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) |
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Jingdao Electronic |
NPN Transistor High voltage capability Features of good high temperature High switching speed 3．PACKAGE SOT-82 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE |
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Jingdao |
NPN power transistor Vce=5V 20 10 1 0.01 0.1 1 2 4 Ic（A） Pc － Tj 100 80 60 40 20 0 40 80 120 160 200 Tj（℃） 0.1 0.01 1 10 100 Vce（V）－ 1000 Ic （A ） 13005D Jingdao Electronic Corporation V01 2/3 Shenzhen Jingdao Electronic Co.,Ltd. ： TO-220 ( ：mm， |
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Jingdao |
Bipolar Junction Transistor 150 100 Ta=25℃ VBEsat (V) hFE IC (A) 2.0 IB=40mA IB=20mA 0 0 5 VCE (V) 5 VBEsat-IC 10 Ta=25℃ IC/IB=2 1 10 0.1 10 VCE=5V 1 1mA 0.01 0.1 IC (A) 1 6 VCEsat-IC 1.5 Ta=25℃ IC/IB=2 10 1.0 VCEsat (V) 0.01 0.1 1 Ic (A) 10 0.5 |
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Jingdao |
Bipolar Junction Transistor Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-126D 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless speci |
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Jingdao Microelectronics |
Surface mount transient voltage suppressor power 400 watts • For surface mounted applications in order to optimize board space. • Low profile package • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability MECHANICAL DATA • Case: SMAF • Terminals: Solderable pe |
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Jingdao |
Bipolar Junction Transistor Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-126D 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless speci |
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Jingdao |
Bipolar Junction Transistor High voltage capability Features of good high temperature High switching speed 3．PACKAGE TO-220 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE |
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Jingdao |
Bipolar Junction Transistor High voltage capability Features of good high temperature High switching speed 3．PACKAGE 1 2 3 TO-3PB 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL V |
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Jingdao |
Bipolar Junction Transistor High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-220 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) |
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Jingdao |
Bipolar Junction Transistor High voltage capability Features of good high temperature High switching speed 3．PACKAGE TO-126D 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE |
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Jingdao |
Bipolar Junction Transistor High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD SOT-82 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) |
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Jingdao |
Bipolar Junction Transistor Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-126D 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless speci |
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