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S13003DL |
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| Part Number | S13003DL |
| Manufacturer | Jingdao |
| Description | R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. S13003DL Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast，et... |
| Features |
Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed
3．PACKAGE
1 VD
TO-126D
4．Electrical Characteristics
4.1 Absolute Maximum Ratings
1 Base(B) 2 Collector(C) 3 Emitter(E)
Tamb= 25℃ unless specified
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emittor Voltage
Emittor- Base Voltage
Collector Current
Power Dissipation
Ta=25℃ Tc=25℃
Junction Temperature
Storage Temperature
4.2 Electrical Parameter
Tamb= 25℃ unless specified
PARAMETER
SYMBOL
Collector-Base Voltage Collector-Emittor Voltage Emittor-Base Voltage C... |
| Document |
 S13003DL Data Sheet
PDF 116.74KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | S13003D |
ETC |
NPN Transistor |
|
| 2 | S13003ADL |
Jingdao |
Bipolar Junction Transistor |
|
| 3 | S1300 |
HAMAMATSU |
Two-dimensional PSD |
|
| 4 | S1300-5MG-BL |
Roithner |
LASER DIODES |
|
| 5 | S1300-5MG-FW |
Roithner |
LASER DIODES |
|