Intersil HGT fiche technique

No.	Partie #	Fabricant	Description
1	HGTP7N60C3D	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT use
2	HGTG30N60B3	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ide
3	HGTP3N60A4	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is
4	HGT1S7N60A4S	Intersil Corporation	600V/ SMPS Series N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is
5	HGT1S7N60B3S	Intersil Corporation	14A/ 600V/ UFS Series N-Channel IGBTs of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is
6	HGT1S12N60A4DS	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT use
7	HGTG20N50C1D	Intersil Corporation	N-Channel IGBT • 20A, 500V • Latch Free Operation • Typical Fall Time < 500ns • High Input Impedance • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSF
8	HGTG30N60B3D	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used i
9	HGTP12N60B3	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is
10	HGTH12N50C1	Intersil Corporation	N-Channel IGBT • 10A and 12A, 400V and 500V • VCE(ON): 2.5V Max. • TFI: 1µs, 0.5µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance • No Anti-Parallel Diode Applications HGTP-TYPES JEDEC TO-220AB • Power Supplies • Motor Drives • Protection C
11	HGTH20N40E1	Intersil Corporation	N-Channel IGBT • 15A and 20A, 400V and 500V • VCE(ON) 2.5V • TFI 1µs, 0.5µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance • No Anti-Parallel Diode Applications • Power Supplies • Motor Drives • Protection Circuits HGTP-TYPES JEDEC TO-220AB
12	HGTP12N60A4D	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT use
13	HGT1S12N60B3S	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is
14	HGT1S3N60B3S	Intersil Corporation	7A/ 600V/ UFS Series N-Channel IGBTs of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is
15	HGTA32N60E2	Intersil Corporation	32A/ 600V N-Channel IGBT • 32A, 600V • Latch Free Operation • Typical Fall Time 620ns • High Input Impedance • Low Conduction Loss Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device ha
16	HGTD1N120CNS	Intersil Corporation	6.2A/ 1200V/ NPT Series N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies
17	HGTD7N60A4S	Intersil Corporation	600V/ SMPS Series N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is
18	HGTG10N120BN	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies whe
19	HGTG12N60D1	Intersil Corporation	N-Channel IGBT • 12A, 600V • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transist
20	HGTG15N120C3	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is