Intersil Corporation HM- fiche technique

No.	Partie #	Fabricant	Description
1	JANSR2N7398	Intersil Corporation	2A/ 500V/ 2.50 Ohm/ Rad Hard/ N-Channel Power MOSFET • 2A, 500V, rDS(ON) = 2.50Ω • Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Of
2	HM1-6518883	Intersil Corporation	1024 x 1 CMOS RAM • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max • Low Power Operation . . . . . . . . . . . . . 20mW/MHz Max
3	JANSR2N7395	Intersil Corporation	8A/ 100V/ 0.230 Ohm/ Rad Hard/ N-Channel Power MOSFET • 8A, 100V, rDS(ON) = 0.230Ω • Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V O
4	P45N02	Intersil Corporation	45A / 20V / 0.022 Ohm / N-Channel Logic Level Power MOSFETs • 45A, 20V • rDS(ON) = 0.022Ω • Temperature Compensating PSPICE Model • Can be Driven Directly from CMOS, NMOS, and TTL Circuits • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature Ordering Information PART NUMBER RF
5	JANSR2N7397	Intersil Corporation	4A/ 250V/ 0.610 Ohm/ Rad Hard/ N-Channel Power MOSFET • 4A, 250V, rDS(ON) = 0.610Ω • Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V O
6	HM1-65262-9	Intersil Corporation	16K x 1 Asynchronous CMOS Static RAM • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/85ns Max • Low Standby Current. . . . . . . . . . . . . . . . . . . .50µA Max • Low Operating Current . . . . . . . . . . . . . . . . . 50mA Max • Data Retention at 2.0V . . . . . . . . . .
7	HM1-6561B883	Intersil Corporation	256 x 4 CMOS RAM • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max • Low Power Operation . . . . . . . . . . . . . 20mW/MHz Max
8	HM4-6642-9	Intersil Corporation	512 x 8 CMOS PROM • Low Power Standby and Operating Power - ICCSB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100µA - ICCOP . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA at 1MHz • Fast Access Time. . . . . . . . . . . . . . . . . . . .
9	JANSR2N7396	Intersil Corporation	5A/ 200V/ 0.460 Ohm/ Rad Hard/ N-Channel Power MOSFET • 5A, 200V, rDS(ON) = 0.460Ω • Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V O
10	RFL1N10	Intersil Corporation	1A/ 80V and 100V/ 1.200 Ohm/ N-Channel/ Power MOSFETs • 1A, 80V and 100V • rDS(ON) = 1.200Ω [ /Title (RFL1N 08, RFL1N1 0) /Subject (1A, 80V and 100V, 1.200 Ohm, NChannel, Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel, Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdf- Ordering In
11	FSJ9055R	Intersil Corporation	55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs • 55A, -60V, rDS(ON) = 0.029Ω • Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V
12	HM-6508	Intersil Corporation	1024 x 1 CMOS RAM • This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max • Low Power Operation . . . . . . . . . . . . . 20mW/MHz Ma
13	HM1-65162C-9	Intersil Corporation	2K x 8 Asynchronous CMOS Static RAM • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/90ns Max • Low Standby Current. . . . . . . . . . . . . . . . . . . .50µA Max • Low Operating Current . . . . . . . . . . . . . . . . . 70mA Max • Data Retention at 2.0V . . . . . . . . . .
14	HM1-6516B-9	Intersil Corporation	2K x 8 CMOS RAM • Low Power Standby . . . . . . . . . . . . . . . . . . . 275µW Max • Low Power Operation . . . . . . . . . . . . . 55mW/MHz Max • Fast Access Time. . . . . . . . . . . . . . . . . . 120/200ns Max • Industry Standard Pinout • Single Supply . . . . .
15	HM1-6561883	Intersil Corporation	256 x 4 CMOS RAM • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max • Low Power Operation . . . . . . . . . . . . . 20mW/MHz Max
16	HM1-65642C883	Intersil Corporation	8K x 8 Asynchronous CMOS Static RAM • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Full CMOS Design • Six Transistor Memory Cell • Low Standby Supply Current . . . . . . . . . . . . . . . .100µA • Low Operating
17	HM4-6516-9	Intersil Corporation	2K x 8 CMOS RAM • Low Power Standby . . . . . . . . . . . . . . . . . . . 275µW Max • Low Power Operation . . . . . . . . . . . . . 55mW/MHz Max • Fast Access Time. . . . . . . . . . . . . . . . . . 120/200ns Max • Industry Standard Pinout • Single Supply . . . . .
18	HM4-65162B-9	Intersil Corporation	2K x 8 Asynchronous CMOS Static RAM • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/90ns Max • Low Standby Current. . . . . . . . . . . . . . . . . . . .50µA Max • Low Operating Current . . . . . . . . . . . . . . . . . 70mA Max • Data Retention at 2.0V . . . . . . . . . .
19	JANSR2N7399	Intersil Corporation	11A/ 100V/ 0.210 Ohm/ Rad Hard/ N-Channel Power MOSFET • 11A, 100V, rDS(ON) = 0.210Ω • Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V
20	JANSR2N7406	Intersil Corporation	24A/ 200V/ 0.110 Ohm/ Rad Hard/ N-Channel Power MOSFET • 24A, 200V, rDS(ON) = 0.110Ω • Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V