JANSR2N7397 |
Part Number | JANSR2N7397 |
Manufacturer | Intersil Corporation |
Description | The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET... |
Features |
• 4A, 250V, rDS(ON) = 0.610Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 4.0nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 Ordering Information PART NUMBER JANSR2N7397 PACKAGE TO-205AF Also available at othe... |
Document |
JANSR2N7397 Data Sheet
PDF 44.99KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | JANSR2N7390 |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
2 | JANSR2N7390U |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
3 | JANSR2N7391 |
International Rectifier |
N-CHANNEL MOSFET | |
4 | JANSR2N7392 |
International Rectifier |
Radiation Hardened Power MOSFET | |
5 | JANSR2N7395 |
Intersil Corporation |
8A/ 100V/ 0.230 Ohm/ Rad Hard/ N-Channel Power MOSFET |