| No. | Partie # | Fabricant | Description | Fiche Technique |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolate package ( 2,500 Volt AC/RMS) • Very low internal ind |
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International Rectifier |
HALF-BRIDGE IGBT DOUBLE INT-A-PAK • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry |
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International Rectifier |
HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry |
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International Rectifier |
HALF-BRIDGE IGBT INT-A-PAK • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package ( 2,500 volt AC) • Very low internal inductance ( 5 nH typ.) • Industry standard outline • UL |
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International Rectifier |
Standard Speed IGBT • Generation 4 IGBT Technology • Standard speed: optimized for hard switching operating frequencies up to 1000 Hz • Very Low Conduction Losses • Industry standard package Standard Speed IGBT VCES = 600V VCE(on) typ. = 1.13V @ VGE = 15V, IC = 200A T |
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International Rectifier |
HALF-BRIDGE IGBT DOUBLE INT-A-PAK • Generation 4 IGBT technology • Standard: Optimized for minimum saturation www.DataSheet4U.com voltage and operating frequencies up to 10kHz • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Indust |
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International Rectifier |
Standard Speed IGBT • Generation 4 IGBT Technology • Standard speed: optimized for hard switching operating frequencies up to 1000 Hz • Very Low Conduction Losses • Industry standard package Standard Speed IGBT VCES = 600V VCE(on) typ. = 1.19V @ VGE = 15V, IC = 200A T |
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International Rectifier |
Ultra-Fast Speed IGBT • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry |
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International Rectifier |
Ultra-FastTM Speed IGBT • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package ( 2,500 volt AC) • Very low internal inductance ( 5 nH typ.) • Industry standard outline C S |
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