| No. | Partie # | Fabricant | Description | Fiche Technique |
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International Rectifier |
Automotive DirectFET Power MOSFET of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Absolute Maximum |
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International Rectifier |
Power MOSFET O O O O O O O AUIRF3710Z AUIRF3710ZS HEXFET® Power MOSFET D Low On-Resistance 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS = 100V RD |
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International Rectifier |
DirectFET Power MOSFET of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Absolute Maximum |
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International Rectifier |
IGBT • Low VCE (on) Planar IGBT Technology • Low Switching Losses • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (on) Temperature Coefficient. • Lead-Free, RoHS Compliant • Automotive Qualified * Benefits • Device optimized for soft swi |
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International Rectifier |
Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * HEXFET® Power MOSFET D V(BR)DSS 60V RDS(on) typ |
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International Rectifier |
Automotive Grade Dual Low Side Driver • Gate drive supply range from 6 V to 20 V • CMOS Schmitt-triggered inputs • 3.3V and 5V logic compatible • Two independent gate drivers • Matched propagation delay for both channels • Outputs in phase with inputs • Leadfree, RoHS compliant • Automot |
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International Rectifier |
DirectFET Power MOSFET of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Absolute Maximum |
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International Rectifier |
Automotive Grade 3 phase gate driver for 24V & higher drives Under-voltage lockout for all channels Cross-conduction prevention logic High voltage pre-regulator MOSFET Power-on reset architecture FAULT detection and Reset Current sense |
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International Rectifier |
MOSFET DRIVER • • • • • • Bootstrap and charge pump Over temperature shutdown (with Ptc interface) Short circuit protection (Vds detection) Reverse battery protection (turns On the MOSFET) Diagnostic ESD protection Product Summary Operating voltage 6-36V Vgate 6V |
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International Rectifier |
Power MOSFET l l l l l l l l HEXFET® Power MOSFET S1 G1 S2 G2 1 2 8 7 Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified* D1 D1 D2 D2 |
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International Rectifier |
Power MOSFET of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Ordering Informa |
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International Rectifier |
Power MOSFET l Advanced Process Technology l Logic Level Gate Drive l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * Description Specifically designed for Automotive app |
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International Rectifier |
high speed power MOSFET and IGBT driver Product Summary • Floating channel designed for bootstrap operation. • Fully operational up to +600V VOFFSET • Tolerant to negative transient voltage, dV/dt immune VOUT • Gate drive supply range from 10V to 20V • Independent low and high side ch |
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International Rectifier |
Power MOSFET ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv/dt Rating ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant ● Automotive Qualified * D G S Description Specific |
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International Rectifier |
N-Channel MOSFET of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Absolute Maximum |
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International Rectifier |
Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET D AUIRF2804 AUIRF2804S AUIR |
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International Rectifier |
DUAL LOW SIDE DRIVER • • • • • • Gate drive supply range from 6 V to 20 V CMOS Schmitt-triggered inputs Matched propagation delay for both channels Outputs out of phase with inputs † Automotive Qualified Leadfree, RoHS compliant Product Summary Topology VOFFSET VOUT Io+ |
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International Rectifier |
DirectFET Power MOSFET combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TA = 25°C IDM PD @TC = 25°C PD @TA = 25°C EAS EAS(tested) IAR EAR |
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International Rectifier |
DirectFET Power MOSFET combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TA = 25°C IDM PD @TC = 25°C PD @TA = 25°C EAS EAS(tested) IAR EAR |
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International Rectifier |
Automotive DirectFET Power MOSFET of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Absolute Maximum |
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