| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Infineon Technologies |
Fast IGBT r dissipation TC = 25°C Operating junction and storage temperature Tj , Tstg -55...+150 °C 1) VCE 600V IC 2A VCE(sat) 2.2V Tj 150°C Package TO-220AB TO-263AB Ordering Code Q67040-S4214 Q67040-S4215 Symbol VCE IC Value 600 6.0 2.9 Unit V A I |
|
|
|
|
Infineon Technologies AG |
IGBT TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2 VGE = 15V, 100VVCC1200V, Tj 150C Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature, refl |
|
|
|
|
Infineon Technologies AG |
Fast IGBT °C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2 VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Solder |
|
|
|
|
Infineon Technologies |
Fast IGBT in NPT-technology t TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand |
|
|
|
|
Infineon Technologies |
Fast IGBT in NPT-technology tter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Tj , Tstg -55...+150 °C 1) VCE 600V IC 15A VCE(sat) 2.3V Tj 150°C Package TO-220AB TO-263AB TO-247AC Ordering Code Q67040-S4251 Q67 |
|
|
|
|
Infineon Technologies AG |
Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode 25°C Operating junction and storage temperature Tj , Tstg -55...+150 °C 1) VCE 600V IC 4A VCE(sat) 2.3V Tj 150°C Package TO-220AB TO-263AB Ordering Code Q67040-S4216 Q67040-S4229 Symbol VCE IC Value 600 9.4 4.9 Unit V A ICpul s IF 19 19 1 |
|