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Infineon Technologies |
Power Transistor 33 4 I F 6G0 I F G0 34 I F 6G0 / 8 1 F) 4 F6 / 8 1 F) 4 F6 ) 4 6 ;2 F 2= 3 40 %D S ET' 3 A I F 6G0 6 G0 / Z= ?3 : ?3 6 2= H2 33 4 I F 6G0 4 I F 6G0 6 ;2 F 4;72 ! F 6G0 1 [1 ' @ : C- ! "#$ ' 2 H: K : C- ! "#$ 3' KO#]^ |
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Infineon Technologies |
MOSFET D) D) W9 ;, 4 ;, +9 E+ , , . 7F C D) . 7F C D) 5+ C 7B C D) * X* 6 .51+ + ? ! ! < 4 ?' 7B Z[\ ! + E4 H 4 ?' 7B Z[\ ,! *4 9 E + 4 4 & + 4 +E 9 E 4 9 O + && && '( )* " 7 ++ 9 ] 9 7 ++ 9 ] 9 4& ( E 4 4+ E 9+ ? +4 & S^_F S^_M ' 7K |
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Infineon Technologies |
MOSFET << GC8K@E> & 8CF> |
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Infineon Technologies |
Power Transistor ( = - == 3 - =L 3 $ 6I: HDJG8: KDAI6<: - @L deReZT . % O - DL: G9>HH>E6I>DC ) e`e , < Y , E: G6I>C< 6C9 HIDG6<: I: B E: G6IJG: , [ , deX * DJCI>C< IDGFJ: * 6C9 * H8G: LH DHS[L ,* *2 2, 1)) *'+ * |
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Infineon Technologies |
CoolMOS Power Transistor • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max |
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Infineon Technologies AG |
CoolMOS Power Transistor • Worldwide best R ds,on in TO247 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tjmax R DS(on),max |
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Infineon Technologies AG |
CoolMOS Power Transistor • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge Product Summary V DS @ T J=25°C R DS(on), |
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Infineon Technologies |
Power Transistor •IncreasedMOSFETdv/dtruggedness •BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •BestinclassRDS(on)/package •Easytouse/drive •Pb-freeplating,halogenfreemoldcompound •Qualifiedforindustrialgradeapplicati |
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Infineon Technologies |
MOSFET •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforindustrialgradeapplicationsaccord |
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Infineon Technologies |
Power Transistor |
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Infineon Technologies |
Power Transistor • Worldwide best R DS ,on in TO220 • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied according to JEDEC1) for target applications Product |
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Infineon Technologies |
E6 Power Transistor b] B=<=; #B'IJ<,* O\R B=I<,,$ 5__[XRPbX^]a F>; abOUSa& VO`R aeWbQVW\U FMD abOUSa O\R `Sa]\O\b aeWbQVW\U FMD abOUSa T]` S(U( F; IWZdS`P]f& 8RO^bS`& C;< " F |
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Infineon Technologies |
CFDA Power Transistor L 4 54 4 Z54 # $% !! - 6F C D) , > 6F C D) ,, - 6F C D) 0 2 *C - C + ? ," 2 *C - C - 5+ C 0 +8 -) @ P AQ" >> < 6F C D) D) X8 : 4 : +8 E+ - 6F C D) ,, - 6F C D) 5+ C0 6B C D) * Y* , -51+ + ? >" " ; 4 ?' 6B [\] " + E4 H 4 ?' 6B |
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Infineon Technologies |
CFDA Power Transistor C $ -9 .+ @ P AQ" = 7F C D+ D+ W9 ; 4 ; -9 E- . 7F C D+ . 7F C D+ 5- C$ 7B C D+ , X, 6 .51- - ? " " < 4 ?( 7B Z[\ " - E4 H 4 ?( 7B Z[\ " ,4 9 !E - 4 4 ' - 4 -E 9 E 4 9 O % ! " # $ %& && && '( )* " 7 -- 9 ] 9 ! 9 - S^_F 7 -- |
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Infineon Technologies |
Power Transistor • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stage |
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Infineon Technologies |
CFD2 Power Transistor 5 ; 0V 3C >& + & Z % ; 3C' /& & 1 9 &9 E& I 9 < &9 - 1 < 1 9 &9 9 :9 B' > ( 9 &9 <& & 1- 9 " ! 0 0 KLMNOP 4Q 4QR 0 QR 9 :9 S B WXW WXW !K OWY 22 0 0 KLMNOP 9 :9 9 ]:9 # $% !! 23 J G 2H/ J G H/ 2 3 J G 2H/ 5.5 7 0 G B 23 G 2 7 0 G |
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Infineon Technologies |
Power-Transistor 4 ( > - >> 4 - >M 4 % 7J; IEKH9; LEBJ7=; - AM efSf[U ! < & P . EM;H: ?II?F7J?ED ) faf , = Z! - F;H7J?D= 7D: IJEH7=; J;C F;H7JKH; , \ , efY + EKDJ?D= JEHGK; + 7D: + I9H;MI DHS[L +* 0 ,, ,.0 *(-1 |
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Infineon Technologies |
Power-Transistor - >> 4 ( > - >> 4 - >M 4 % 7J; IEKH9; LEBJ7=; - AM efSf[U ! < & P . EM;H: ?II?F7J?ED ) faf , = Z! - F;H7J?D= 7D: IJEH7=; J;C F;H7JKH; , \ , efY + EKDJ?D= JEHGK; + 7D: + I9H;MI DHS[L + |
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Infineon Technologies |
CoolMOS Power Transistor • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max |
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Infineon Technologies |
CoolMOS Power Transistor • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q |
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