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IPW65R190E6 |
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| Part Number | IPW65R190E6 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ E6 series combines the ex... |
| Features |
• Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max RDS(on),max Qg,typ ID,pulse Eoss @ 400V Body diode di/dt 700 0.19 73... |
| Document |
 IPW65R190E6 Data Sheet
PDF 2.03MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPW65R190E6 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IPW65R190C6 |
Infineon Technologies |
Power Transistor |
|
| 3 | IPW65R190C7 |
Infineon |
MOSFET |
|
| 4 | IPW65R190C7 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPW65R190CFD |
Infineon Technologies |
CFD2 Power Transistor |
|