| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon Technologies |
MOSFET •Highvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •Lowgatecharge •Loweffectivecapacitances •Pb-freeplating,RoHSCompliant,Halogenfreemoldcompound •Qualifiedforconsumergradeapplications Applications LEDL |
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Infineon Technologies |
MOSFET •Highvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •Lowgatecharge •Loweffectivecapacitances •Pb-freeplating,RoHSCompliant,Halogenfreemoldcompound •Qualifiedforconsumergradeapplications Applications LEDL |
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Infineon Technologies |
MOSFET • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) |
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Infineon Technologies |
Power Transistor • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for: • Hard switching |
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Infineon Technologies |
IPA60R190E6 • • • • Extremely low losses due to very low FOM R dson*Qg and Eoss Very high commutation ruggedness Easy to use/drive JEDEC1) qualified, Pb-free plating, Halogen free drain pin 2 gate pin 1 Applications PFC stages, hard switching PWM stages and re |
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Infineon Technologies |
Power Transistor • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, halogen free (excluding TO-252) Applications PFC stages, hard switching PWM stages and resonant |
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Infineon Technologies |
IGBT With Antiparallel Diode Preliminary data sheet 1 Thermal Resistance Thermal resistance, junction - case Diode thermal resistance, chip case Symbol Values BUP 311D Unit °C - Tj Tstg - -55 ... + 150 -55 ... + 150 55 / 150 / 56 RthJC RthJCD ≤1 ≤ 2.5 K/W Electrical Characteristics, at Tj = 25 |
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Infineon Technologies |
IPAC-X ISDN PC ADAPTER CIRCUIT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 1.2 Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 1.3 Typical Applications . . . |
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Infineon Technologies |
Power-Transistor • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoH |
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Infineon Technologies |
Power-Transistor • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according |
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Infineon Technologies |
Power-Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summar |
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Infineon Technologies |
Power-Transistor • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max@T |
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Infineon Technologies |
MOSFET Y( J= L[^hWdTaj& ;VSbfWd& F=> " J>J MN& F[YZf[`Y& LWdhWd& MW^WUa_ and FAD' =C4-'D(),6-# =C5-'D(),6=CC-'D(),6- =CI-'D(),6- AL>EI ZSX ) D>NB ZSX ( MJOL@B ZSX * J^WSeW `afW4 @ad GIL@?M bSdS^^W^[`Y fZW geW aX XWdd[fW TWSVe a` fZW YSfW ad eWbSdSfW fa |
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Infineon Technologies |
MOSFET • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stage |
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Infineon Technologies |
MOSFET be X(Z( J= L\_iXeUbk& ;WTcgXe& F=> " J>J MO& F\Z[g\aZ& LXeiXe& MX_XVb` and NJL( (61-=1 89>1" $9< &'*$#+ ;-<-6616583 >41 ?=1 92 21<<5>1 .1-0= 98 >41 3->1 9< =1;-<->1 >9>17 ;961= 5= 3181<-66@ <1/97718010! FKLVO ( >Ob CO[PY[WKXMO CK[KWO]O[\ 6>L>HBNBL |
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Infineon Technologies |
MOSFET strial Applications AL>EI ZSX ) D>NB ZSX ( .KKGE@>NEJIM J@= fgTZXf& [TeW fj\gV[\aZ JPG fgTZXf TaW eXfbaTag fj\gV[\aZ JPG fgTZXf Ybe X(Z( J= L\_iXeUbk& ;WTcgXe& F=> " J>J MO& F\Z[g\aZ& LXeiXe& ELRLJUS and NJL( MJOL@B ZSX * (61-=1 89>1" $9< &'*$#+ |
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Infineon Technologies |
MOSFET |
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Infineon Technologies |
CoolMOS Power Transistor • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge Product Summary V DS @ T J=25°C R DS(on), |
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Infineon Technologies |
MOSFET X(Z( J= L\_iXeUbk& ;WTcgXe& F=> " J>J MO& F\Z[g\aZ& LXeiXe& MX_XVb` and NJL( |
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Infineon Technologies |
Power Transistor • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stage |
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